Trap analysis on Pt-AlGaN/GaN Schottky barrier diode through deep level transient spectroscopy  

作　　者：Ashish Kumar Jayjit Mukherjee D.S.Rawal K.Asokan D.Kanjilal 

机构地区：[1]Department of Physics,School of Natural Science,University of Petroleum and Energy Studies,Bidholi,Dehradun-248007,India [2]Inter University Accelerator Centre,Aruna Asaf Ali Road,Vasantkunj,New Delhi-110067,India [3]Solid State Physics Laboratory,DRDO,Timarpur,New Delhi-110054,India

出　　处：《Journal of Semiconductors》2023年第4期92-97,共6页半导体学报（英文版）

基　　金：the financial support received from the Department of Science and Technology,India through DST-INSPIRE Faculty scheme(DST/INSPIRE/04/2015/001572).

摘　　要：Trap characterization on GaN Schottky barrier diodes(SBDs)has been carried out using deep-level transient spectroscopy(DLTS).Selective probing by varying the ratio of the rate window values(r)incites different trap signatures at similar temperature regimes.Electron traps are found to be within the values:0.05–1.2 eV from the conduction band edge whereas the hole traps 1.37–2.66 eV from the valence band edge on the SBDs.In the lower temperature regime,the deeper electron traps contribute to the capacitance transients with increasing r values,whereas at the higher temperatures>300 K,a slow variation of the trap levels(both electrons and holes)is observed when r is varied.These traps are found to be mainly contributed to dislocations,interfaces,and vacancies within the structure.

关 键 词：deep traps Pt-SBD DLTS rate window defects 

分 类 号：TN311.7[电子电信—物理电子学]