红外加热吸附反应外延系统的温度均匀性研究  

Study on temperature uniformity of infrared thermal adsorption reaction epitaxy system

作　　者：闫恒彬 陈焰[1] 明帅强 夏洋[2] YAN Heng-bin;CHEN Yan;MING Shuai-qiang;XIA Yang(Faculty of Information Engineering and Automation,Kunming University of Science and Technology,Kunming 650500,China;Microelectronic Instrument and Equipment Research Center,Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China)

机构地区：[1]昆明理工大学信息工程与自动化学院,云南昆明650500 [2]中国科学院微电子研究所微电子仪器设备研究中心,北京100029

出　　处：《激光与红外》2023年第3期377-385,共9页Laser & Infrared

基　　金：中科院关键技术团队项目(No.GJJSTD20200003)资助。

摘　　要：为指导全新的吸附反应外延技术ARE(Absorption Reaction Epitaxy,ARE)设备红外热源的设计,分析在真空腔室中红外管阵列的热流分布。通过对灯管阵列灯管数量、灯管间距、灯阵与硅片之间距离等设计参数。采用COMSOL Multiphysics软件进行仿真模拟,研究了以红外为热源的设备腔室及硅片温度场分布情况,实测硅片表面温度及均匀性与仿真基本吻合。结果表明在保证源在硅片表面良好扩散效果的同时,当灯管阵列灯管长度为200 mm,数量为11根,间距10 mm,距离硅片15 mm时硅片表面温度不均匀度达到0.683%,满足红外加热吸附反应外延工艺需求,可为ARE红外热源及腔室设计提供参考。In order to guide the design of a new infrared heat source for the ARE(Absorption Reaction Epitaxy)equipment,the heat flux distribution of infrared tube array in vacuum chamber is analyzed.The design parameters such as the number of lamps in the lamp array,the spacing between the lamps and the distance between the lamp array and the silicon wafer are studied.Simulations are carried out using COMSOL Multiphysics software to simulate and study the temperature field distribution of the device chamber and silicon wafer with infrared as heat source,and the measured temperature and uniformity of the silicon wafer surface are basically consistent with the simulation.The results show that while ensuring a good diffusion effect of the source on the wafer surface,the surface temperature uniformity of the silicon wafer reaches 0.683%when the length of the tube array is 200 mm,the number is 11,the spacing is 10 mm,and the distance from the silicon wafer is 15 mm,which can meet the requirements of infrared heating adsorption reaction epitaxial process and can provide reference for the design of ARE infrared heat source and chamber.

关 键 词：吸附反应外延 红外 硅片 仿真 温度场分布 

分 类 号：TN219[电子电信—物理电子学]