Ⅱ类超晶格红外探测器多层膜背增透研究  

Study on multilayer anti-reflective coatings of type-Ⅱ superlattice infrared photodetector

作　　者：游聪娅 刘铭[1] 任秀娟[1] 崔戈[1] 周朋[1] YOU Cong-ya;LIU Ming;REN Xiu-juan;CUI Ge;ZHOU Peng(North China Research Institute of Electro-Optics,Beijing 100015,China)

机构地区：[1]华北光电技术研究所,北京100015

出　　处：《激光与红外》2023年第3期408-412,共5页Laser & Infrared

摘　　要：Ⅱ类超晶格材料相对较小的吸收系数限制了超晶格焦平面探测器的探测性能,通过在焦平面背面镀制增透膜,可有效提升器件的量子效率。研究采用仿真计算,设计了GaSb基InAs/GaSb超晶格探测器的多层背增透膜结构,并在GaSb衬底和超晶格焦平面探测器上进行了制备,实验结果验证了该薄膜具有提升探测器响应性能的作用。The relatively small absorption coefficient of type Ⅱ superlattice material limits the photodetection performance of focal plane photodetectors.The quantum efficiency of the device can be effectively improved by depositing anti-reflective coating on the backside of the focal plane array.In this paper,multilayer antireflective coatings of GaSb-based InAs/GaSb superlattice photodetector are designed and prepared on GaSb substrate and focal plane array photodetector using simulation calculations.The experimental results verify that the multilayer anti-reflection film has the effect of improving photodetection performance of the detector.

关 键 词：Ⅱ类超晶格 焦平面探测器 背增透 

分 类 号：TN213[电子电信—物理电子学]