带有旋转的压电半导体层状结构中的广义Love波  

Generalized Love waves in piezoelectric semiconductor layered structures with rotation

作　　者：曹通 李立[1] 王春艳[1] 张倩 CAO Tong;LI Li;WANG Chunyan;ZHANG Qian(School of Science,Qiqihar University,Qiqihar 161006,China)

机构地区：[1]齐齐哈尔大学理学院,黑龙江齐齐哈尔161006

出　　处：《高师理科学刊》2023年第3期21-25,共5页Journal of Science of Teachers＇College and University

基　　金：黑龙江省自然科学基金项目(LH2020A023);黑龙江省省属高等学校基本业务费科研项目(135409318);黑龙江省教育科学规划重点课题(GJB1421350);齐齐哈尔大学教育科学研究项目(GJQTYB202203)。

摘　　要：研究了半空间上带有旋转压电半导体覆盖层状结构中的广义Love波.以弹性半空间材料为基底,带有厚度为h的压电半导体覆盖层.基于压电半导体材料的本构方程以及考虑旋转效应的控制方程,结合边界条件以及广义Love波函数的试探解,推导出考虑旋转效应的压电半导体层状结构中广义Love波的波速方程,从而为压电半导体材料在工程中的应用提供理论基础.Generalized Love waves in a half-space structure with a rotating piezoelectric semiconductor overlay are investigated.An elastic half-space material is used as a substrate with a piezoelectric semiconductor overlay with a thickness.The constitutive equation of piezoelectric semiconductor materials and the governing equation considering the rotation effect,combined with the boundary conditions and the trial solution of the generalized Love wave function,the wave velocity equation of the generalized Love wave in the layered structure considering the rotation effect is derived,which provides the theoretical basis for the application of piezoelectric semiconductor materials in engineering.

关 键 词：半空间 旋转 覆盖层 压电半导体 广义Love波 

分 类 号：O241.8[理学—计算数学]