短波红外单光子探测器的发展(特邀)  

Advancement of shortwave infrared single-photon detectors(invited)

作　　者：史衍丽 李云雪 白容 刘辰 叶海峰 黄润宇 侯泽鹏 马旭 赵伟林 张家鑫 王伟 付全[3] Shi Yanli;Li Yunxue;Bai Rong;Liu Chen;Ye Haifeng;Huang Runyu;Hou Zepeng;Ma Xu;Zhao Weilin;Zhang Jiaxin;Wang Wei;Fu Quan(School of Physics and Astronomy,Yunnan University,Kunming 650000,China;Key Lab of Quantum Information,Yunnan University,Kunming 650000,China;Yunnan Precious Metals Laboratory Co.Ltd,Kunming 650000,China)

机构地区：[1]云南大学物理与天文学院,云南昆明650000 [2]云南大学量子信息重点实验室,云南昆明650000 [3]云南贵金属实验室有限公司,云南昆明650000

出　　处：《红外与激光工程》2023年第3期27-42,共16页Infrared and Laser Engineering

基　　金：量子保密通信关键技术研究与开发(2018ZI002);云南贵金属实验室科技计划项目(YPML-2022050220)。

摘　　要：InP/InGaAs短波红外单光子探测器(SPAD)是目前制备技术较为成熟且获得广泛应用的单光子探测器,通过半导体热电制冷(TEC)即可达到的工作温度(-40℃左右),具有体积小、成本低,方便安装和携带的应用优势;另外,基于常规半导体二极管的芯片制造工艺很容易实现大面阵单光子阵列,除了探测信号,还具备三维数字成像功能。国外包括美国、瑞士、意大利、韩国、日本等对InP/InGaAs SPAD进行了长期持续的研究,目前已研制出单管的货架产品,性能还在不断的优化和改进之中,其单光子探测器阵列呈现了清晰的三维成像效果,正在逐步应用。国内包括重庆光电技术研究所、中国科学院上海技术物理所、西南技术物理研究所、中国科学技术大学、云南大学等对InP/InGaAs SPAD芯片先后进行了器件设计和器件制备研究,目前单管的性能已经达到与国外报道相当的性能。国内单光子探测器阵列的研究获得了一定的进展,但芯片规模和器件性能有待提升。文中对国内外InP/InGaAs短波红外单光子探测器的发展,在设计和研制中存在的问题,以及近10年来的优化改进进行了介绍,重点介绍了高温、高速以及单光子焦平面阵列的发展,并结合新颖的离化工程和新的材料体系发展,分析了未来的短波红外单光子探测器的发展趋势。Signifacance InP/InGaAs shortwave infrared single-photon avalanche diodes(SPADs)have proved to be the most practical tool for the detection of near-infrared single-photon because of their small volume,near-room-temperature operation,and ease of integration and fabrication of a focal plane array based on the conventional semiconductor manufacturing process.They have achieved wide application including quantum secure communication,spectrum analysis,weak signal detection,Light Detection and Ranging(LiDAR),as well as self-driving vehicles considering the eye-safe laser requirement.etc.The further mass application depends on the performance and price of the SPADs,so the issues about the avalanche diode design and processing,as well as the solution are very important for accelerating the practical application.The review and analyses about the advancement of the shortwave infrared SPDs is very essential for both the academic research and application.Progress The separate absorption,grading,charge,and multiplication(SAGCM)structure has been used for InP/InGaAs SPADs since it was designed.This ensures the low electrical field in InGaAs absorption layer and high field in multiplication layer,then tunnelling current arising from high electrical field in absorption layer is remarkably suppressed,so the dark counts.Except for the essential material structure design,the electrical field uniformity in the multiplication layer also influences the performance such as the dark counts of the SPADs.The afterpulsing problem is another issue limiting the maximum count rate of the SPD in the current period.Focusing these issues of InP/InGaAs SPADs,solutions for them are concluded from the long-term study of InP/InGaAs SPADs.The high detection efficiency SPADs,room-temperature SPADs,and high count rate SPADs reported in the past decade by various institutions at home and abroad are summarized in detail.The typical performance parameter detection efficiency is improved by increasing the quantum efficiency via integrated absorption enhanc

关 键 词：短波红外 单光子探测器 INP/INGAAS 高温 高速 单光子焦平面 

分 类 号：TN215[电子电信—物理电子学]