基于皮秒激光诱导击穿光谱技术的镓酸锌薄膜的快速定量分析研究  

Rapid quantitative analysis of ZnGa_(2)O_(4)(GZO)thin films using picosecond laser induced breakdown spectroscopy

作　　者：董丽丽 高晴 吴家森 夏祥宇 刘世明 修俊山 Dong Lili;Gao Qing;Wu Jiasen;Xia Xiangyu;Liu Shiming;Xiu Junshan(School of Chemistry and Chemical Engineering,Shandong University of Technology,Zibo 255000,China;School of Physics and Optoelectronic Engineering,Shandong University of Technology,Zibo 255000,China)

机构地区：[1]山东理工大学化学化工学院,山东淄博255000 [2]山东理工大学物理与光电工程学院,山东淄博255000

出　　处：《红外与激光工程》2023年第3期331-339,共9页Infrared and Laser Engineering

基　　金：国家自然科学基金(11704228);山东省自然科学基金(ZR2022MA044,ZR2016AQ22)。

摘　　要：采用射频磁控溅射方法在不同的溅射功率下制备了掺杂Ga元素的ZnO透明导电薄膜材料(ZnGa_(2)O_(4),GZO),在GZO薄膜的制备过程中,溅射功率会对样品的组分配比产生影响,从而导致GZO薄膜的性能产生差异。文中利用皮秒激光诱导击穿光谱技术(PS-LIBS)对GZO薄膜进行了微烧蚀分析,对GZO薄膜的关键元素浓度比进行了快速定量分析研究。结果表明GZO薄膜的光学性能与元素谱线强度比之间存在一定的联系,随着溅射功率的增加,Zn/Ga的谱线强度比值与浓度比呈现出一致的变化,Ga元素的含量与样品的禁带宽度变化一致。同时,使用玻耳兹曼斜线法与斯塔克展宽法对等离子体温度与电子密度进行了计算。所有结果表明,PS-LIBS技术可以实现GZO薄膜关键组分配比的快速分析,为磁控溅射法制备GZO薄膜的工艺现场的快速性能分析、制备参数的实时优化提供了技术参考。Objective In recent years,with the rapid development of the research on nanomaterials,transparent conductive oxide nanofilms have been widely used in many fields such as flat display,liquid crystal display screen and thin film solar cell due to their good conductivity and high transmittance in visible light range.ZnGa_(2)O_(4)(GZO)nanofilms are prepared by doping gallium elements in zinc oxide thin films,and its performance is close to that of traditional tin doped indium oxide(ITO)thin films.Radio frequency(RF)magnetron sputtering,as a mature preparation method for thin film materials,has been widely used in scientific research and industrial fields due to its advantages of stability and high film forming quality.However,in the preparation process of GZO thin film materials,changes in magnetron sputtering parameters often lead to differences in the composition ratio,resulting in different performance of the samples.Therefore,it is necessary to quickly analyze the composition ratio of the prepared GZO films,so as to analyze the performance of the sample and optimize the process parameters of magnetron sputtering.For this purpose,an available and effective analytical method was used to achieve the detection of the composition ratio of the prepared GZO films by radio frequency magnetron sputtering at different sputtering powers.Methods During the deposition process of the GZO thin film,the sputtering powers affected the composition ratio of the samples,resulting in a difference in the performance of the GZO thin film,such as the transmittance(Fig.1)and optical band gap widths(Fig.2)of GZO films.In this work,the GZO thin films were analyzed by picosecond laser induced breakdown spectroscopy(PS-LIBS),and the critical element concentration ratios of GZO films were quantitatively analyzed.Results and Discussions PS-LIBS experimental setup(Fig.3)and the corresponding LIBS spectroscopy of GZO thin film(Fig.4)were shown.Moreover,the plasma temperature and electron density produced by picosecond laser ablation of GZO film

关 键 词：射频磁控溅射法 皮秒激光诱导击穿光谱技术 等离子体温度 电子密度 定量分析 

分 类 号：O433.4[机械工程—光学工程]