基于GaAs表面等离子体栅阵结构的太赫兹调制器  

A terahertz modulator based on GaAs surface plasma grating array structure

作　　者：汪辰宇 廖宇 梅志杰 刘旭东 孙怡雯 WANG Chenyu;LIAO Yu;MEI Zhijie;LIU Xudong;SUN Yiwen(Department of Biomedical Engineering,Medical School,Shenzhen University,Shenzhen 518000,China)

机构地区：[1]深圳大学医学部生物医学工程学院,广东深圳518000

出　　处：《量子电子学报》2023年第2期275-281,共7页Chinese Journal of Quantum Electronics

基　　金：国家自然科学基金(61975135);广东省自然科学基金(2019A1515010869)。

摘　　要：太赫兹波具有载频高、带宽大、频谱信息丰富等特点,其在高速通信、分子检测和生物医学成像等领域的潜力已得到广泛关注。太赫兹调制器是太赫兹检测系统中的关键器件,但是当前已报道的调制器都不能同时具备高效、高速、低插入损耗等特点。因此,提出并设计了一种基于GaAs肖特基二极管结合表面等离子体栅阵结构的电控太赫兹调制器。该器件将谐振腔和金属栅阵的电场增强效应相互叠加,大幅提升了器件的调制性能,实现了0.4~1.4 THz范围内多频点调制,最高调制深度约为80%,插入损耗低于10 d B,调制速度大于100kHz。Due to its high carrier frequency,large bandwidth and rich spectral information,terahertz waves have been widely concerned for their potential in high-speed communication,molecular detection,and biomedical imaging.Terahertz modulator is a key device in terahertz detection system,but the currently reported modulators cannot have the characteristics of high efficiency,high speed and low insertion loss at the same time.Therefore,an electronically controlled terahertz modulator based on a GaAs Schottky diode combined with a surface plasma gate array structure is proposed and designed.The device superimposes the electric field enhancement effects of the resonant cavity and the metal gate array on each other,which significantly improves the modulation performance of the device and achieves multi-frequency modulation in the range of 0.4 to 1.4 THz with a maximum modulation depth of about 80%,insertion loss lower than 10 dB,and modulation speed greater than 100 kHz.

关 键 词：光电子学 太赫兹调制器 金属栅阵结构 肖特基二极管 

分 类 号：O441.4[理学—电磁学]