基于退火效应硒化铅融合量子点制备及探测器性能研究  

Fabrication of lead selenide fused quantum dots based on annealing effect andstudy of detector performance

作　　者：张林松 刘蓉[1] 刘欢[1] ZHANG linsong;LIU Rong;LIU Huan(Xi’an University of Technology,College of Photoelectric Engineering,Xi’an 710021,China)

机构地区：[1]西安工业大学光电工程学院,西安710021

出　　处：《自动化与仪器仪表》2023年第3期7-12,共6页Automation & Instrumentation

基　　金：National Natural Science Foundation of China(51902240);Key Research and Development Program of Shaanxi Province(2019ZDLGY16-01)。

摘　　要：硒化铅纳米结构材料因其多激子产生效应、快速光敏吸收和近红外发射而被广泛应用于太阳能电池和光电探测器,并成为探测器领域的研究热点。在制备硒化铅量子点的基础上,通过退火工艺得到了一种新型的纳米材料融合量子点。所需的最佳退火温度可以有效减少缺陷,提高融合量子点的活性。为了体现融合量子点与其他材料相比的优势,采用旋涂法制备薄膜并用于光电导器件的研制。退火温度从室温提高到470℃,通过透射电子显微镜观察了不同温度下硒化铅量子点的融合现象,并研究了量子点退火对光电导器件性能的影响。量子点之间的平均距离随着退火温度的升高而减小,这增强了量子点之间的相互融合。实验数据表明,硒化铅活性层的最佳退火温度为310℃,开关比K和响应度R在310℃时达到最大值,响应度增加3倍以上。这是因为硒化铅活性层中载流子的迁移率增强。并成功制备了光电导探测器Au/PbSe融合量子点/Au(100 nm),为后续制备新的量子点器件奠定了基础。Lead selenide nanostructured materials are widely used in solar cells and photodetectors because of their multi-exciton effect, fast photosensitive absorption and near-infrared emission. Based on the preparation of lead selenide quantum dots, we obtained a new type of nano-material fusion quantum dots by annealing process. The required optimal annealing temperature can effectively reduce the defects and improve the activity of the fused quantum dots. In order to realize the advantages of fusing quantum dots compared with other materials, films were prepared by spin-coating method and used in the development of photoconductive devices. The fusion of lead selenide quantum dots (qds) at different temperatures was observed by transmission electron microscope, and the effect of qds annealing on the properties of photoconductive devices was studied. The average distance between quantum dots decreases with the increase of annealing temperature, which enhances the fusion of quantum dots. The experimental data show that the optimum annealing temperature of the active layer of lead selenide is 310 ℃, and the switching ratio K and the responsivity R reach the maximum at 310 ℃, the responsivity increases more than 3 times. This is due to the enhanced carrier mobility in the active layer of lead selenide. The photoconductive detector Au/PbSe fused quantum dots/AU (100nm) has been successfully prepared, which lays a foundation for the further preparation of new quantum dot devices.

关 键 词：硒化铅融合量子点 退火工艺 开关比 响应度 

分 类 号：TP202[自动化与计算机技术—检测技术与自动化装置] TB39[自动化与计算机技术—控制科学与工程]