混合键合技术在三维堆叠封装中的研究进展  

Research Progress of Hybrid Bonding Technology in 3D-Stacking Packaging

作　　者：赵心然 袁渊 王刚 王成迁 Zhao Xinran;Yuan Yuan;Wang Gang;Wang Chengqian(The 58^(th)Research Institute,CETC,Wuxi 214035,China)

机构地区：[1]中国电子科技集团公司第五十八研究所,江苏无锡214035

出　　处：《半导体技术》2023年第3期190-198,共9页Semiconductor Technology

摘　　要：随着半导体技术的发展,传统倒装焊(FC)键合已难以满足高密度、高可靠性的三维(3D)互连技术的需求。混合键合(HB)技术是一种先进的3D堆叠封装技术,可以实现焊盘直径≤1μm、无凸点的永久键合。阐述了HB技术的发展历史、研究进展并预测了发展前景。目前HB技术的焊盘直径/节距已达到0.75μm/1.5μm,热门研究方向包括铜凹陷、圆片翘曲、键合精度及现有设备兼容等,未来将突破更小的焊盘直径/节距。HB技术将对后摩尔时代封装技术的发展起到变革性作用,在未来的高密度、高可靠性异质异构集成中发挥重要的作用。With the development of semiconductor technology,the traditional flip-chip(FC)bonding has become difficult to meet the requirements of three-dimensional(3D)interconnection technology with high density and high reliability.Hybrid bonding(HB)technology is an advanced 3D-stacking packaging technology,which can achieve permanent bonding with pad diameter≤1μm and without bumps.The development history,research progress and development prospect of HB technology are described.Currently,HB technology can realize pad diameter/pitch of 0.75μm/1.5μm.Popular research directions include Cu recess,wafer warpage,bonding accuracy and existing equipment compati-bility,etc.In the future,there will be breakthrough in smaller pad diameter/pitch.HB technology will play a revolutionary role in the development of packaging technology in post-Moore law period,and will play a significant role in high-density and high-reliability heterogeneous integration in the future.

关 键 词：混合键合(HB) 先进封装 三维(3D)堆叠 无凸点键合 范德华力 

分 类 号：TN305.94[电子电信—物理电子学]