半导体单光子雪崩光电二极管的封装发展  

Packaging of Semiconductor Single-Photon Avalanche Photodiodes(SPAD)

作　　者：刘杰 汪冰[1] 马涛[1] 李奇 左标 LIU Jie;WANG Bing;MATao LI;Qi ZUO Biao(The 43rd Research Institute of China Electronics Tecology Group Corporation of Microeletronics Anhui Province Key Laboratory of Microsystem,Hefei 230088,China)

机构地区：[1]中国电子科技集团公司第四十三研究所微系统安徽省重点实验室,安徽合肥230088

出　　处：《光学与光电技术》2023年第1期108-117,共10页Optics & Optoelectronic Technology

基　　金：安徽省重大科技专项(101073642011)资助项目。

摘　　要：半导体单光子雪崩二极管可实现微弱信号的探测,在量子通讯、激光雷达和大气探测等领域具有重要应用。虽然半导体单光子雪崩二极管的性能主要取决于探测芯片设计、流片工艺和外围匹配电路的设计,但后续的封装技术对其探测性能也有重要的影响。聚焦多年来半导体单光子雪崩二极管的封装发展,简要介绍了相应封装形式和技术,以及封装对于雪崩二极管性能的影响,最后对半导体单光子雪崩二极管的封装发展前景做出了展望。Semiconductor single-photon avalanche photodiodes can carry out weak signals detections and have important applications in quantum communications,lidar and atmospheric detection.Although the performance of semiconductor single-photon avalanche photodiodes mainly depends on the design of detector chip,chip fabrication technology and design of peripheral matching circuit,the subsequent packaging technology also has an important influence on its performance.This paper focuses on the packaging development of semiconductor single-photon avalanche photodiodes over the years.The corresponding packaging forms and technologies briefly are introduced,as well as the impact of packaging on the performance of avalanche photodiodes.Finally a prospect for the packaging development of semiconductor single-photon avalanche photodiodes is presented.

关 键 词：半导体单光子雪崩光电二极管 封装技术 暗计数 探测效率 热管理技术 光路耦合技术 

分 类 号：TN36[电子电信—物理电子学]