金属氧化物TFT工艺中铜/钛蚀刻液浓度控制体系研究  

Research on the Influence and the Method Control of Cu/Ti Etchant Concentration during the Process of Metal Oxide Field-effect Transistor

作　　者：赵辉 ZHAO Hui(Nanjing BOE Display Technology Co.,Ltd.,Nanjing 210033,CHN)

机构地区：[1]南京京东方显示技术有限公司,南京210033

出　　处：《光电子技术》2023年第1期48-52,共5页Optoelectronic Technology

摘　　要：深入分析了铜钛刻蚀液的刻蚀机理,并对刻蚀液浓度的变化进行实验分析。在此基础上,通过实验完成了铜钛刻蚀液浓度变化模型曲线的研发,并提出了进行浓度控制的方法,实现了铜钛刻蚀液的稳定应用并极大地提高刻蚀液的使用寿命。研究为相关领域的生产和研发提供了一定的参考。The etching mechanism of Cu/Ti etchant and the change of etchant concentration was experimentally analyzed. On the basis, the changing curve of etchant concentration was clearly checked by experimental results. The control method of Cu/Ti etchant concentration was also suggested. And then, the life time and stability of Cu/Ti etchant was obvious improved,providing some reference for the research and production of related field.

关 键 词：金属氧化物 湿法刻蚀 铜/钛刻蚀液 浓度控制 

分 类 号：TN949.12[电子电信—信号与信息处理]