一种抗辐射加固带隙基准的设计方法  

A Design Method of Band Gap Reference for Anti-Radiation Reinforcement

作　　者：梁盛铭[1] 向飞[1] 王菡[1] 苟超 钟英俊 LIANG Shengming;XIANG Fei;WANG Han;GOU Chao;ZHONG Yingjun(th Research Institute of China Electronics Technology Group Corporation,Chongqing 400060,China)

机构地区：[1]中国电子科技集团公司第二十四研究所,重庆400060

出　　处：《现代应用物理》2023年第1期152-156,共5页Modern Applied Physics

摘　　要：介绍了一种双极型抗总剂量辐射带隙基准的设计方法。该方法基于带隙基准结构,通过引入负反馈采样电路,来补偿总剂量辐照后晶体管性能退化引起的基准电压漂移,动态维持基准电压的初始精度,减小总剂量辐照的影响。同时,给出了实验结果,展示了抗总剂量辐照带隙基准取得的有益效果。该抗总剂量辐射带隙基准的设计方法是在电路结构设计上开展的加固优化设计,结合工艺加固措施,可一定程度上提升基准电路的抗总剂量能力,通过线路扩展可形成一个完整的抗辐射带隙基准单元。A design method of a total dose radiation-hardening band-gap reference with bipolar process is introduced.In this method,a negative feedback sampling circuit is proposed to compensate for the reference voltage drift caused by the degradation of transistor performance after total dose radiation,and the initial precision of reference voltage is dynamically maintained to reduce the influence of total dose radiation on the precision of reference voltage.The experimental results show that the design method can improve the total dose radiation-hardening of the reference circuit to a certain extent,and a complete radiation-hardening band-gap reference IP unit can be formed through line expansion.

关 键 词：总剂量辐照 带隙基准 电流增益 基极电流补偿 基准电压精度 

分 类 号：TL99[核科学技术—核技术及应用] TN40[电子电信—微电子学与固体电子学]