功率对直流磁控溅射氧化钒薄膜电学性能的影响  

Effect of power on electrical properties of vanadium oxide thin films prepared by direct current magnetron sputtering

作　　者：李兆营 Li Zhaoying(Vital Optics Technology Co.,Ltd.,Chuzhou 239000,China)

机构地区：[1]安徽光智科技有限公司,安徽滁州239000

出　　处：《电镀与精饰》2023年第4期45-50,共6页Plating & Finishing

摘　　要：采用直流磁控溅射方法在长有300 nm厚的Si_(3)N_(4)薄膜的Si(100)晶圆上制备了氧化钒薄膜,利用X射线衍射仪(XRD)、X射线光电子能谱(XPS)、原子力显微镜(AFM)和探针法分析了不同功率对薄膜结晶结构、成分、表面形貌和电学性能的影响。结果表明:不同功率沉积的氧化钒薄膜均为非晶结构,薄膜主要成分为VO_(2)和V_(2)O_(5);随着功率的提高,薄膜的平均粗糙度降低,V_(2)O_(5)的含量升高,进而导致电阻温度系数绝对值也随之增大。Vanadium oxide thin films were prepared on Si(100)wafers with 300 nm thick Si3N4 films by direct current magnetron sputtering.The effects of different power on the crystal structure,composition,surface morphology and electrical properties of the films were analyzed by X-ray diffraction(XRD),X-ray photoelectron spectroscopy(XPS),atomic force microscopy(AFM)and probe method.The results show that the vanadium oxide films deposited at different power are amorphous,and the main components of the films are VO2 and V_(2)O_(5).With the increase of power,the average roughness of the film decreases,and the content of V_(2)O_(5) increases,which leads to the increase of the absolute value of the temperature coefficient of resistance.

关 键 词：氧化钒薄膜 功率 直流磁控溅射 电阻温度系数 

分 类 号：TN305.92[电子电信—物理电子学]