引入射频诱导效应的BCT PD-SOI MOSFET建模技术研究  

Modeling of BCT PD-SOI MOSFET with RF inductive effect

作　　者：黎莹 王军[1] LI Ying;WANG Jun(College of Information Engineering,Southwest University of Science and Technology,Mianyang 621010,Sichuan Province,China)

机构地区：[1]西南科技大学信息工程学院,四川绵阳621010

出　　处：《电子元件与材料》2023年第3期347-353,共7页Electronic Components And Materials

基　　金：国家自然科学基金(69901003);四川省教育厅自然科学基金(18ZA0502)。

摘　　要：为了精确模拟高漏源电压(V_(DS))条件下体接触(Body Contact,BCT)部分耗尽型(Partial Depletion,PD)绝缘体上硅(Silicon-on-Insulator,SOI)MOSFET器件的异常射频诱导效应,建立了一个基于碰撞电离和寄生BJT机理的RL网络模型。首先分析了SCBE模型的体区输出导纳参数,并利用该参数的解析式推导出一种电阻与电感串联的网络拓扑;然后基于直接提取法准确提取RL网络模型的参数;最后,通过仿真得出S21、S22参数分别在史密斯圆图的下半圆和上半圆按顺时针旋转的现象,同时在0.01~20 GHz范围内模型模拟的S参数与实测的S参数的相对误差为2.1%,验证了RL网络模型的有效性和准确性。To accurately simulate the anomalous RF inductive effect of body contact(BCT)partial depletion(PD)siliconon-insulator(SOI)MOSFET devices under high VDS condition,an RL network model based collisional ionization and parasitic BJT mechanism was developed.Firstly,the output conductance parameters of the body region for SCBE model were analyzed,and a resistor-inductor series network topology was derived.Then the parameters of the RL network model were extracted accurately based on the direct extraction method.Finally,the phenomena of S21 and S22 parameters rotating clockwise in the lower and upper half circles of the Smith chart was derived by the simulation,respectively.And the relative error between the simulated results and the measured results of S-parameters in the range of 0.01-20 GHz is 2.1%,which proves the validity and accuracy of the RL network model.

关 键 词：BCT PD-SOI MOSFET 小信号等效电路 射频诱导效应 S参数 

分 类 号：TN385[电子电信—物理电子学]