IGBT开关模块的附加支路恒导纳模型  

Additional-branches Fixed-admittance Model of IGBT Switching Module

作　　者：侯延琦 刘崇茹 王鑫艳 郑乐 HOU Yanqi;LIU Chongru;WANG Xinyan;ZHENG Le(State Key Laboratory of Alternate Electrical Power System with Renewable Energy Sources(North China Electric Power University),Changping District,Beijing 102206,China)

机构地区：[1]新能源电力系统国家重点实验室(华北电力大学),北京市昌平区102206

出　　处：《中国电机工程学报》2023年第6期2381-2391,共11页Proceedings of the CSEE

基　　金：国网福建省电力有限公司科技支撑项目(SGFJJY00GHJS2100065)。

摘　　要：建立电力电子器件的恒导纳模型是实现大规模电力电子系统小步长实时仿真的主要途径之一,文中针对高开关频率下恒导纳模型的仿真精度问题开展研究。首先,分析恒导纳模型虚拟功率损耗的来源,量化数值积分方法对模型损耗的影响;然后,针对绝缘栅双极型晶体管(insulated gate bipolar transistor,IGBT)反并联二极管结构,提出一种附加支路恒导纳模型,配合开关状态改变附加支路结构,使模型在不采用插值算法的情况下仍能保证较低的功率损耗;其次,针对典型的三相两电平电压源型换流器应用场景,分别定量计算和定性分析采用插值和不采用插值两种情况下附加支路恒导纳模型的损耗。最后,基于PSCAD/EMTDC平台设置对照试验,验证所提模型的适用性和等效插值方法的局限性。Establishing the fixed-admittance model of power electronic devices is one of the main ways to realize small-step real-time simulation of large-scale power electronic systems.This paper focuses on the simulation accuracy of fixed-admittance model at high switching frequency.Firstly,the virtual power loss of fixed-admittance model is analyzed,and the influence of numerical integration method on the loss is quantified.Secondly,an additional-branches fixed-admittance model is proposed aiming at the structure of insulated gate bipolar transistor(IGBT)with anti-parallel diode,which changed the structure of the additional branches with the switching state,so that it could still ensure low power loss without interpolation.Thirdly,for the typical application scenarios-three-phase two-level voltage source converter(VSC),the losses of the proposed model with interpolation and without interpolation are quantitatively calculated and qualitatively analyzed separately.Finally,the applicability of the proposed model and the limitation of the equivalent interpolation are verified based on PSCAD/EMTDC.

关 键 词：恒导纳模型 小步长实时仿真 附加支路 插值 

分 类 号：TM743[电气工程—电力系统及自动化]