Al掺杂量和衬底温度对ALD沉积的ZnMgO∶Al薄膜的影响  

Effects of substrate temperature and Al doping level on photoelectric properties of ZnMgO∶Al thin films deposited by ALD

作　　者：郭栋豪 唐芝平 邓陈坤 朱文超 周驰宇 谈晓辉 GUO Dong-hao;TANG Zhi-ping;DENG Chen-kun;ZHU Wen-chao;ZHOU Chi-yu;TAN Xiao-hui(Faculty of Materials Metallurgy and Chemistry,Jiangxi University of Science and Technology,Ganzhou 341000,Jiangxi,China)

机构地区：[1]江西理工大学材料冶金化学学部,江西赣州341000

出　　处：《西北师范大学学报（自然科学版）》2023年第2期67-71,共5页Journal of Northwest Normal University(Natural Science)

基　　金：湖南省自然科学基金资助项目(2016JJ3155);江西理工大学博士科研启动基金项目(205200100346);大学生创新训练计划项目(DC2021-020)。

摘　　要：ZnMgO∶Al具有近紫外透明导电薄膜的应用潜力.使用原子层沉积(ALD)制备了ZnMgO∶Al薄膜,研究了Al掺杂量和衬底温度对ZnMgO∶Al薄膜的物相和光电性能的影响.研究结果表明,在较高Mg含量下,Al重掺杂(>5%)将破坏ZnMgO∶Al的结晶性,迅速恶化其电学性能.ZnMgO∶Al的光学性质对衬底温度不敏感,但较高的衬底温度(210℃)能大幅改善薄膜的导电性.ZnMgO∶Al has potential to be a near-ultraviolet transparent conductive film.ZnMgO∶Al thin films were prepared by atomic layer deposition(ALD).The effects of Al doping and substrate temperature on the phase and photoelectric properties of ZnMgO∶Al thin films were investigated.The results show that at high Mg content,heavy doping of Al(>5%)will destroy the crystallinity of ZnMgO∶Al and rapidly deteriorate its electrical performance.The optical properties of ZnMgO∶Al are not sensitive to the substrate temperature,but a higher substrate temperature(210℃)can significantly improve the conductivity of the film.

关 键 词：ZnMgO∶Al AL掺杂 衬底温度 透明导电薄膜 

分 类 号：TQ134.32[化学工程—无机化工]