高k介质可靠性技术研究综述  

Review on Reliability Techniques for High-k Dielectrics

作　　者：王姝雁 田郭平 WANG Shu-yan;TIAN Guo-ping(Sichuan Institute of Solid-State Circuits,China Electronics Technology Group Corp.,Chongqing 400060)

机构地区：[1]中国电子科技集团公司第二十四研究所,重庆400060

出　　处：《环境技术》2023年第3期38-43,共6页Environmental Technology

摘　　要：作为信息技术革命的主要驱动力之一,集成电路元器件的尺寸缩小是降低制造成本,提高器件性能最有效的方法。由于栅极厚度接近物理和技术极限,高k介质成为新栅极材料研究的重点。本文总结了高k介质的主要可靠性问题,从其测试技术、机理研究和解决方案等方面进行了介绍,对未来集成电路可靠性提高和性能优化具有指导意义。As one of the main driving forces of the information technology revolution,the size reduction of integrated circuit components is the most effective way to reduce manufacturing costs and improve device performance.As the gate thickness of Si02 has approached the physical and technical limits,high-k dielectrie has become a new research focus of gate materials.This paper summarizes the main reliability problems of high-k dielectrie,and introduces its testing technology,mechanism research and solutions,which is of guiding significance for the improvement of Integrated circuit reliability and performance in the future.

关 键 词：高k介质 可靠性 时变击穿 介质恢复 

分 类 号：TN406[电子电信—微电子学与固体电子学]