中频磁控反应溅射氧化硅(SiO_(x))薄膜绝缘性的研究  

Research of Insulation of Silicon Oxide Film Produced by Medium Frequency Magnetron Sputtering

作　　者：张汉焱 郑丹旭 沈奕 陈玉云 ZHANG Han-yan;ZHENG Dan-xu;SHEN Yi;CHEN Yu-yun(Shantou Goworld Display Technology Co.,Ltd.,Shantou 515041,China)

机构地区：[1]汕头超声显示器技术有限公司,广东汕头515041

出　　处：《真空》2023年第2期34-38,共5页Vacuum

基　　金：广东省企业科技特派员项目(GDKTP2021033800)。

摘　　要：本文采用兆欧表测量电阻的方法,研究了中频磁控溅射氧化硅(SiO_(x))薄膜的绝缘性。利用XRD和FTIR对薄膜进行了表征。结果表明:溅射产物为无定型SiO_(x);兆欧表探针接触薄膜瞬间的电阻Ri与FTIR图谱位于900cm^(-1)波数附近的吸收峰a和760cm^(-1)附近的吸收峰b相关;随着Ri增加,吸收峰b红移,a与b的峰高比上升,SiO_(x)薄膜含氧量增大;Ri偏低的异常品经过250℃热处理,可达到正常产品的阻值范围,镀膜腔室内氧浓度的异常变化是生产过程中SiOx薄膜绝缘性下降的原因。The insulation of medium frequency magnetron sputtered silicon oxide films were surveyed by resistance measurement with megohm meter. The films were characterized by XRD and FTIR. The results show that the film is amorphous SiOx.Instantaneous resistance(Ri) when the probe on the megohm meter attaches the SiOxfilm is related to the absorbing peaks near wavenumber 900cm-1(peak a) and 760cm-1(peak b) on FTIR spectrum. As Ririses, peak b shows red shift and the peak height ratio of peaks a and b rises. It can be concluded that Ririses with content of oxygen in SiO_(x) film. The abnormal products with lower Rican be recovered to normal range by 250℃ heating treatment. The insulation decrease of SiO_(x) films in production process may be caused by abnormal change of oxygen concentration in the chamber.

关 键 词：中频磁控溅射 氧化硅薄膜 绝缘性 电阻 傅里叶变换红外光谱 含氧量 

分 类 号：O484.1[理学—固体物理] TB43[理学—物理]