单片集成光耦隔离式驱动芯片  

Monolithic optocoupler isolated driver chip

作　　者：程翔 常浩然 刘岩 邓晨洋 严旭杰 CHENG Xiang;CHANG Haoran;LIU Yan;DENG Chenyang;YAN Xujie(School of Aerospace Engineering,Xiamen University,Xiamen 361104,China;School of Marine Information Engineering,Jimei University,Xiamen 361021,China)

机构地区：[1]厦门大学航空航天学院,福建厦门361104 [2]集美大学海洋信息工程学院,福建厦门361021

出　　处：《光学精密工程》2023年第7期1022-1030,共9页Optics and Precision Engineering

基　　金：福建省教育厅-面上项目(No.JAT200264);国家重点研发计划资助项目(No.2021YFB3200201)。

摘　　要：在功率半导体市场中,绝缘栅双极型晶体管(Insulated gate bipolar transistor,IGBT)和碳化硅金属氧化物半导体场效应管(Silicon carbide metal-oxide-semiconductor field-effect transistor,SiC MOSFET)具有出色的耐压性与频率特性,逐渐取代了传统的MOSFET。为了提高IGBT和SiC MOSFET驱动电路的可靠性,设计了一款光耦隔离式栅极驱动芯片,通过协同设计光探测器与驱动电路,从而实现单片集成。使用Silvaco软件对光探测器进行了仿真。仿真结果显示:光探测器对800 nm波长红外光的响应度约为0.277 A/W,-3 dB带宽约为90 MHz。进一步对光耦的光学结构进行优化设计,实现了控制端与后端高压驱动电路的有效隔离,从而解决了串扰问题。使用Maxchip 0.18μm 40 V BCD工艺进行流片,并对封装芯片进行测试。在光源输入电流为10 mA、芯片供电电压为12~40 V、输入信号频率为20 kHz的测试条件下,芯片的传播延时仅为98 ns。In the power semiconductor market,insulated gate bipolar transistor(IGBT)and silicon carbide metal-oxide-semiconductor field-effect transistors(SiC MOSFETs)have excellent voltage resistance and frequency characteristics,and thus gradually replaced the traditional MOSFETs.The reliability design of IGBT and SiC MOSFET driver circuits is associated with rigorous challenges.Therefore,an optocoupler-isolated gate driver chip was designed in this study.Monolithic integration was realized by co-designing photodetectors and driver circuits.Silveraco software was used to simulate the photodetector.The simulation results indicate that the responsivity of the photodetector to 800 nm infrared light is 0.277 A/W,and the-3 dB bandwidth is approximately 90 MHz.Further,the optical structure of the optocoupler was optimized to effectively isolate the control end and the rear high-voltage drive circuit,and thus the crosstalk problem was addressed.The 0.18μm 40 V bipolar-CMOS-DMOS(BCD)technique was used to tape out and test the package chip.The chip test results indicate that the chip propagation delay is only 98 ns when the input current of the light source is 10 mA, the chip power supply voltage is 12–40 V, andthe input signal frequency is 20 kHz.

关 键 词：协同设计 单片集成 光耦隔离 低延时 

分 类 号：TN312[电子电信—物理电子学]