光刻胶材料的研究进展  

Research Progress of Photoresist Materials

作　　者：刘巧云[1] 祁秀秀[1] 杨怡[1] 朱翔宇 周勇[1] Liu Qiaoyun;Qi Xiuxiu;Yang Yi;Zhu Xiangyu;Zhou Yong(School of Inspection and Testing Certification,Changzhou Vocational Institute of Engineering,Changzhou 213164,China)

机构地区：[1]常州工程职业技术学院检验检测认证学院,江苏常州213164

出　　处：《微纳电子技术》2023年第3期378-384,共7页Micronanoelectronic Technology

基　　金：国家教育部首批国家级职业教育教师教学创新团队建设项目。

摘　　要：简单介绍了光刻胶的组成部分,综述了近年来国内外光刻胶成膜树脂合成、开发的研究进展,并根据不同曝光波长所需的不同光刻胶(包括紫外(UV)光刻胶、深紫外光刻胶、极紫外光刻胶等)进行了介绍。重点介绍了各光源下分子量和分子量分散指数对光致抗蚀剂的影响,并对国内外研究中通过不同聚合工艺制备的不同分子量光致抗蚀剂性能进行了评述,总结了近年来含有特定化学结构的光致抗蚀剂以及其制备工艺的研究进展。最后对国内外光刻胶的发展和应用进行了展望,指出进一步提高光刻胶的分辨率、改善其综合性能是今后的研究重点。The components of the photoresist are briefly introduced,and the research progresses of synthesis and development of photoresist film forming resin at home and abroad in recent years are reviewed with the emphasis on different photoresists required by different exposure wavelengths,including the ultraviolet(UV)photoresist,deep UV photoresist,extreme UV photoresist and other aspects.The effects of molecular weight and dispersion index of molecular weight for different light sources on the photoresists are emphatically introduced,and the photoresists with different molecular weights prepared by different polymerization processes at home and abroad are reviewed.The research progress of photoresists with specific chemical structure and their preparation technology in recent years are summarized.Finally,the development and application of photoresists at home and abroad are prospected.It is pointed out that further improving the resolution and comprehensive performance of photoresists is the focus of future research.

关 键 词：紫外(UV)光刻胶 深紫外光刻胶 极紫外光刻胶 成膜树脂 分辨率 

分 类 号：TB34[一般工业技术—材料科学与工程]