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作 者:黄胜利 凌天宇 徐剑[1] 胡敬佩 付学成[1] 刘民[1] 权雪玲 Huang Shengli;Ling Tianyu;Xu Jian;Hu Jingpei;Fu Xuecheng;Liu Min;Quan Xueling(Center for Advanced Electronic Materials and Devices,School of Electronic Information and Electrical Engineering,Shanghai Jiao Tong University,Shanghai 200240,China;Laboratory of Information Optics and Optoelectronic Technology,Shanghai Institute of Optics and Fine Mechanics,Chinese Academy of Sciences,Shanghai 201800,China)
机构地区:[1]上海交通大学电子信息与电气工程学院先进电子材料与器件平台,上海200240 [2]中国科学院上海光学精密机械研究所信息光学与光电技术实验室,上海201800
出 处:《微纳电子技术》2023年第3期461-467,共7页Micronanoelectronic Technology
基 金:2018年度上海研发公共服务平台建设项目(18DZ2295400)。
摘 要:使用电子束直写加工工艺,在石英基底上完成了亚微米级8台阶二元光学元件的光刻加工。由于石英基底为绝缘体,导电性差,不利于电子束直写时电荷的传导。为了抑制石英基底上电荷的积累,探讨了不同的增强导电技术对电子束直写效果的影响,最终选择了光刻胶表面沉积金属的方式,同时配合优化的特定对准标记设计,不仅提高了电子束直写在石英基底上加工二元光学元件的对准精度,套刻误差小于400 nm,而且拼接缺陷大幅度减少,显著提升了元件的加工质量。Electron beam direct writing processing technology was applied for fabricating submicron 8-step binary optical element on quartz substrate.The quartz substrate is an insulator and has poor conductivity,so it is hard to conduct electric charges during electron beam direct writing.To suppress the charge accumulation in quartz substrate,the influences of different enhanced conduction techniques on the effect of electron beam direct writing was discussed.Finally,the method of depositing metal on the surface of the photoresist was chosen.Meanwhile,with the optimized design of specific alignment marks,the alignment accuracy of binary optical elements processed by electron beam directly written on quartz substrate is improved significantly and the overlay error is less than 400 nm.And the stitching defects are reduced a lot,which markedly improves the processing quality of elements.
关 键 词:石英 亚微米 二元光学元件 电荷积累 电子束直写
分 类 号:TN205[电子电信—物理电子学]
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