硅铝丝超声键合弹坑效应的影响研究  

Influence of silicon aluminum wire ultrasonic bonding on crater effect

作　　者：刘媛萍 邵菲 孙澜澜 张成果 LIU Yuanping;SHAO Fei;SUN Lanlan;ZHANG Chengguo(China Academy of Space Technology(Xi’an),Xi’an 710000,China)

机构地区：[1]中国空间技术研究院西安分院,西安710000

出　　处：《空间电子技术》2023年第2期118-122,共5页Space Electronic Technology

摘　　要：对于硅芯片引线键合过程中经常出现的薄膜剥落和弹坑问题,从焊盘结构、键合线材料、键合参数和键合顺序等方面分析了影响因素。不合适的焊盘硬度和厚度会造成弹坑,引线键合时应特别注意。对于键合引线,除延伸率和抗拉强度外,引线硬度也应引起关注。对于键合参数,针对不同的芯片和键合引线,应进行参数优化,以达到最佳的键合效果。研究结果为实际生产中硅铝丝键合工艺的优化提供了解决思路。The problems of film peeling and crater often appeared in bonding wire bonding on silicon chip.The influence is analyzed from the bonding pad structure,bonding wire material,bonding parameters and bonding sequence.Improper pad hardness and thickness will cause craters,which should be paid special attention during wire bonding.For bonding wires,in addition to elongation and tensile strength,wire hardness should also be concerned.For bonding parameters,parameters should be optimized for different chips and bonding wires to achieve the best bonding effect and bonding quality.The research provides a solution for the optimization of silicon aluminum wire bonding process.

关 键 词：硅铝丝 弹坑 超声键合 

分 类 号：V443[航空宇航科学与技术—飞行器设计] TN91[电子电信—通信与信息系统]