刻蚀工艺参数对单晶硅太阳能电池性能影响  

Effect of Etching Process Parameters on Performance of Monocrystalline Silicon Solar Cells

作　　者：周平 周林 安文俊 ZHOU Ping;ZHOU Lin;AN Wen-jun(School of Intelligent Manufacturing and Energy Engineering,Jiangxi University of Engineering,Xinyu 338000,China)

机构地区：[1]江西工程学院智能制造与能源工程学院,江西新余338000

出　　处：《西安文理学院学报（自然科学版）》2023年第2期44-47,共4页Journal of Xi’an University(Natural Science Edition)

基　　金：江西省教育厅科学技术研究项目(GJJ202909)。

摘　　要：以单晶硅太阳能电池刻蚀为研究对象,研究应用电子显微镜观察、电性能分析等方法,揭示不同刻蚀工艺参数下单晶硅片塔基的微观形态及电性能.结果表明:通过应用优质刻蚀添加剂,可使硅片塔基形状改善,电性能参数提高;添加剂初期时生产的电池片填充因子提高1.0299;高减重单晶硅太阳能电池片反射率相对较低.Taking monocrystalline silicon solar cells etching as the research object,the microscopic morphology and electrical properties of monocrystalline silicon tower base under different etching process parameters were revealed by means of electron microscope observation and electrical performance analysis.The results show that the shape of silicon wafer base and electrical performance parameters can be improved by using high-quality etching additives.The filling factor of the cells produced at the initial stage of the additive is increased by 1.0299.The reflectivity of high-weight monocrystalline silicon solar cells is relatively low.

关 键 词：刻蚀 单晶硅 工艺参数 添加剂 太阳能电池 

分 类 号：TM914[电气工程—电力电子与电力传动]