Large-Area Monolayer n-Type Molecular Semiconductors with Improved Thermal Stability and Charge Injection  

作　　者：Sai Jiang Lichao Peng Xiaosong Du Qinyong Dai Jianhang Guo Jianhui Gu Jian Su Ding Gu Qijing Wang Huafei Guo Jianhua Qiu Yun Li 

机构地区：[1]School of Microelectronics and Control Engineering,Changzhou University,Changzhou 213164,China [2]National Laboratory of Solid-State Microstructures,School of Electronic Science and Engineering,Collaborative Innovation Center of Advanced Microstructures,Nanjing University,Nanjing 210093,China

出　　处：《Chinese Physics Letters》2023年第3期68-73,共6页中国物理快报（英文版）

基　　金：the National Natural Science Foundation of China(Grant No.62206030);the Natural Science Foundation of Jiangsu(Grant Nos.BK20220624 and BK20220620);the Scientific Research Foundation of Jiangsu Provincial Education Department(Grant No.21KJB510010);the Changzhou Sci&Tech Program(Grant No.CJ20220085);the Leading Innovative Talents Introduction and Cultivation Project of Changzhou(Grant No.CQ20210084)。

摘　　要：We fabricated monolayer n-type two-dimensional crystalline semiconducting films with millimeter-sized areas and remarkable morphological uniformity using an antisolvent-confined spin-coating method.The antisolvent can cause a downstream Marangoni flow,which improves the film morphologies.The deposited crystalline monolayer films exhibit excellent thermal stabilities after annealing,which reveals the annealing-induced enhancement of crystallinity.The transistors based on the n-type monolayer crystalline films show linear output characteristics and superior electron mobilities.The improved charge injection between monolayer films and Au electrodes results from the energy level shift as the films decrease to the monolayer,which leads to a lower injection barrier.This work demonstrates a promising method for fabricating air-stable,low-cost,high-performance,and large-area organic electronics.

关 键 词：MONOLAYER CRYSTALLINE annealing 

分 类 号：O471[理学—半导体物理]