基于GaAs PHEMT工艺的Ka波段三通道开关滤波器  

A Ka-Band Three-Channel Switching Filter Based on GaAs PHEMT Technology

作　　者：王朋[1] 韦雪真 Wang Peng;Wei Xuezhen(The 13^(th)Research Institute,CETC,Shijiazhuang 050051,China)

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050051

出　　处：《半导体技术》2023年第4期324-327,352,共5页Semiconductor Technology

摘　　要：基于0.15μm GaAs赝配高电子迁移率晶体管(PHEMT)工艺设计了一款22~42 GHz的宽带三通道开关滤波器芯片。该开关滤波器由单刀三掷开关、带通滤波器、控制电路构成。开关采用场效应晶体管(FET)串并结合结构实现。带通滤波器采用梳状结构,一端加载金属-绝缘体-金属(MIM)电容实现。芯片集成了2∶4线译码器作为控制电路,实现通道的选择和切换。芯片尺寸为3.0 mm×2.4 mm×0.1 mm。测试结果表明,三个通道的插入损耗均小于8.5 dB,带内回波损耗均小于-10 dB,带外衰减均大于40 dB。该开关滤波器芯片具有插入损耗小、隔离度高、集成度高、阻带宽的特点。Based on 0.15μm GaAs pseudomorphic high electron mobility transistor(PHEMT)technology,a 22-42 GHz broadband three-channel switching filter chip was designed.The switching filter was composed of single-pole three-throw switch,bandpass filter and control circuit.The switch was implemented with the series-shunt field effect transistor(FET)hybrid structure.The bandpass filter was implemented with the comb structure,which was loaded with metal-insulator-metal(MIM)capacitor at one end.The chip integrated a 2∶4 decoder as a control circuit to realize channel selection and switching.The chip size is 3.0 mm×2.4 mm×0.1 mm.The measurement results show that the insertion loss of the three channels is less than 8.5 dB,the in-band return loss is less than-10 dB,and the outof-band attenuation is more than 40 dB.It has the features of low insertion loss,high isolation,high integration and wide stop bandwidth.

关 键 词：开关滤波器 GaAs赝配高电子迁移率晶体管(PHEMT)工艺 带通滤波器 译码器 宽带 

分 类 号：TN713.5[电子电信—电路与系统] TN43