硼-氮共掺杂垂直石墨烯电极的制备及其葡萄糖检测性能  

Preparation of boron-nitrogen co-doped vertical graphene electrode for glucose detection

作　　者：陈政 翟妮妮 高素华 李明吉[2] 李红姬[1] CHEN Zheng;ZHAI Ni-Ni;GAO Su-Hua;LI Ming-Ji;LI Hong-Ji(School of Chemistry and Chemical Engineering,Tianjin University of Technology,Tianjin 300384,China;School of Integrated Circuit Science and Engineering,Tianjin University of Technology,Tianjin 300384,China)

机构地区：[1]天津理工大学化学化工学院,天津300384 [2]天津理工大学集成电路科学与工程学院,天津300384

出　　处：《无机化学学报》2023年第5期785-793,共9页Chinese Journal of Inorganic Chemistry

基　　金：国家自然科学基金(No.62271350);天津市自然科学基金重点项目(No.20JCZDJC00290)资助。

摘　　要：采用电子辅助热丝化学气相沉积技术制备了垂直石墨烯(VG)、硼掺杂垂直石墨烯(BVG)、氮掺杂垂直石墨烯(NVG)及硼-氮共掺杂垂直石墨烯(BNVG)薄膜,采用扫描电子显微镜、透射电子显微镜、X射线光电子能谱及Raman光谱仪表征了形貌、微结构及成分,并采用电化学方法分析了其作为表皮传感电极的电化学性能。结果表明,BNVG薄膜由垂直于基片生长的二维纳米片排列成了三维多孔网结构,这些纳米片的硼和氮原子分数达到3.78%和2.75%。BNVG薄膜电极的皮肤接触电阻低至4.5 kΩ,对于葡萄糖的响应浓度范围在0.001~10000μmol·L^(-1),检测限低至0.03μmol·L^(-1),具有良好的抗干扰能力及长期稳定性。In this work,vertical graphene(VG)and boron-doped vertical graphene(BVG),nitrogen-doped vertical graphene(NVG),and B-N co-doped vertical graphene(BNVG)films were prepared by electron-assisted hot-filament chemical vapor deposition.Scanning electron microscopy,transmission electron microscopy,X-ray photoelectron spectroscopy,and Raman spectroscopy were used to characterize the morphology,microstructure,and composition,and the electrochemical performance of the skin-sensing electrode was analyzed by electrochemical methods.The results show that the BNVG film has a three-dimensional porous network structure,which is formed by interlacing many vertically grown graphene nanosheets.The content of B and N atoms(atomic fraction)in these nanosheets reached 3.78%and 2.75%,respectively.Furthermore,the skin-contact resistance of the BNVG film electrode was only 4.5 kΩ,which was lower than that of the VG electrode.The BNVG film electrode-based sensor had a wide linear range of 0.001 to 10000μmol·L^(-1),and the detection limit was as low as 0.03μmol·L^(-1)(S/N=3).Moreover,the developed sensing electrode showed excellent anti-interference ability and long-term stability(45 d).

关 键 词：掺杂石墨烯 化学气相沉积 垂直生长 表皮电极 汗液葡萄糖 

分 类 号：TH122[机械工程—机械设计及理论] TB332[一般工业技术—材料科学与工程]