宽温度锁定808 nm激光器阵列  

808 nm Laser Array with Wide Temperature⁃Locking Range

作　　者：张娜玲 王翠鸾[2] 熊聪[2] 朱凌妮[2] 李伟[2] 刘素平[2] 马骁宇[2,3] 赵鑫 马晓辉 Zhang Naling;Wang Cuiluan;Xiong Cong;Zhu Lingni;Li Wei;Liu Suping;Ma Xiaoyu;Zhao Xin;Ma Xiaohui(State Key Laboratory of High Power Semiconductor Laser,Changchun University of Science and Technology,Changchun 130022,Jilin,China;National Engineering Research Center for Optoelectronic Devices,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;College of Materials Science and OptoElectronic Technology,University of Chinese Academy of Sciences,Beijing 100049,China)

机构地区：[1]长春理工大学高功率半导体激光国家重点实验室,吉林长春130022 [2]中国科学院半导体研究所光电子器件国家工程研究中心,北京100083 [3]中国科学院大学材料科学与光电技术学院,北京100049

出　　处：《中国激光》2023年第5期14-19,共6页Chinese Journal of Lasers

摘　　要：为了提高808 nm激光器对固体激光器的泵浦效率,对其波长稳定性进行了研究。阐述了光栅设计的理论基础。将纳米压印、干法刻蚀及湿法腐蚀工艺相结合,制备了含有一阶光栅的808 nm分布反馈(DFB)激光器阵列。在准连续条件(脉宽为200µs,频率为20 Hz)下对所制备的激光器进行性能测试。测试结果表明:所制备的808 nm DFB激光器阵列的发射波长随温度的漂移系数为0.06 nm/℃,温度锁定范围可达70℃(-10~60℃),随电流的漂移系数为0.006 nm/A。Objective 8XX nm highpower semiconductor lasers have wide applications in pumping solidstate lasers.The absorption peak of doped ions in the solid state is extremely narrow,typically only a few nanometers.However,the temperature drift coefficient of a typical FabryPérot laser is approximately 0.3 nm.When the operating temperature changes just a bit,the emission spectrum deviates from the absorption spectrum of the ions doped in the crystal,decreasing the pumping efficiency.Developing 808 nm semiconductor lasers with stabilized wavelengths is crucial for improving pumping efficiency.In this study,an 808-nmdistributed feedback(DFB)laser diode array is prepared,and the theoretical basis of the grating design,device structure,and fabrication process are introduced.The emission wavelength of the 808 nm array laser exhibits a drift coefficient of 0.06 nm/℃with temperature,a locking range of 70℃(−10‒60℃),and a drift coefficient of 0.006 nm/A with the current.This study demonstrates favorable conditions for improving the temperaturelocking range of array lasers.Methods First,the relevant parameters of the firstorder grating,such as the grating period and etching depth,were determined using the coupled wave theory.Next,808 nm laser arrays were grown via metalorganic chemical vapor deposition(MOCVD)in two steps.After the first epitaxial growth,the grating(Fig.2)was prepared using nanoimprinting lithography and inductively coupled plasma(ICP)dry etching and wet etching processes.Subsequently,in the second epitaxial step,the pAlGaAs grating covering layer,pAlGaAs cladding layer,and GaAs contact layer were grown.Finally,the wafer was prepared in laser arrays using lithography,electrode preparation,coating,and packaging processes.The performances of the DFB laser arrays and the laser arrays without an inner grating with different heat sink temperatures and injection currents were measured.The results were analyzed.Results and Discussios The performance of the laser arrays for different head sink temperatures and inj

关 键 词：激光器 锁定 808 nm 激光器阵列 一阶光栅 

分 类 号：TN248.4[电子电信—物理电子学]