High-throughput fabrication of large-scale metasurfaces using electron-beam lithography with SU-8 gratings for multilevel security printing  

作　　者：YOU SIN TAN HAO WANG HONGTAO WANG CHENGFENG PAN JOEL K.W.YANG 

机构地区：[1]Singapore University of Technology and Design,487372 Singapore,Singapore [2]Institute of Materials Research and Engineering,A*STAR(Agency for Science,Technology and Research),138634 Singapore,Singapore

出　　处：《Photonics Research》2023年第3期I0040-I0047,共8页光子学研究（英文版）

基　　金：National Research Foundation Singapore(NRF-CRP20-2017-0004,NRF-NRFI06-2020-0005)。

摘　　要：The field of metasurface research has rapidly developed in the past decade.Electron-beam lithography(EBL)is an excellent tool used for rapid prototyping of metasurfaces.However,Gaussian-beam EBL generally struggles with low throughput.In conjunction with the recent rise of interest in metasurfaces made of low-index dielectric materials,we propose in this study the use of a relatively unexplored chemically amplified resist,SU-8 with EBL,as a method for rapid prototyping of low-index metasurfaces.We demonstrate the use of SU-8 grating on silicon for cost-efficient fabrication of an all-dielectric multilevel security print for anti-counterfeiting purposes,which encrypt different optical information with different light illumination conditions,namely,bright-field reflection,dark-field reflection,and cross-polarized reflection.The large-scale print(1 mm^(2))could be exposed in a relatively short time(~11 min)due to the ultrahigh sensitivity of the resist,while the feature size of~200 nm was maintained,demonstrating that SU-8 EBL resist serves as a good candidate for rapid prototyping of metasurface designs.Our results could find applications in the general area of increasing EBL patterning speed for a variety of other devices and structures.

关 键 词：LITHOGRAPHY beam dielectric 

分 类 号：TN305.7[电子电信—物理电子学]