Suitable contacting scheme for evaluating electrical properties of GaN-based p-type layers  

作　　者：Siyi Huang Masao Ikeda Minglong Zhang Jianjun Zhu Jianping Liu 

机构地区：[1]School of Nano-Tech and Nano-Bionics,University of Science and Technology of China,Hefei 230026,China [2]Suzhou Institute of Nano-Tech and Nano-Bionics,Chinese Academy of Sciences,Suzhou 215123,China [3]Key Laboratory of Nanodevices and Applications,Chinese Academy of Sciences,Suzhou 215123,China

出　　处：《Journal of Semiconductors》2023年第5期62-68,共7页半导体学报（英文版）

基　　金：financially supported by the National Key Research and Development Program of China(2017YFE0131500);the Key Research and Development Program of Guangdong Province(2020B090922001);National Natural Science Foundation of China(61834008,62150710548);Key Research and Development Program of Jiangsu province(BE2020004,BE2021008-1);Guangdong Basic and Applied Basic Research Foundation(2019B1515120091)。

摘　　要：A suitable contacting scheme for p-(Al)GaN facilitating quick feedback and accurate measurements is proposed in this study.22 nm p^(+)-GaN followed by 2 nm p-In_(0.2)Ga_(0.8)N was grown on p-type layers by metal-organic chemical vapor deposition.Samples were then cut into squares after annealing and contact electrodes using In balls were put at the corners of the squares.Good linearity between all the electrodes was confirmed inⅠ–Ⅴcurves during Hall measurements even with In metal.Serval samples taken from the same wafer showed small standard deviation of~4%for resistivity,Hall mobility and hole concentration.The influence of contact layer on the electrical characteristics of bulk p-type layers was then investigated by step etching technique using inductively coupled plasma etching and subsequent Hall-effect measurements.Identical values could be obtained consistently when a 28 nm non-conductive layer thickness at the surface was taken into account.Therefore,the procedures for evaluating the electrical properties of GaN-based p-type layers just using In balls proposed in this study are shown to be quick and useful as for the other conventionalⅢ–Ⅴmaterials.

关 键 词：GAN electrical properties ohmic contact 

分 类 号：TQ133.51[化学工程—无机化工]