一种快速准确的大功率IGBT建模方法  

Efficient and Accurate Modeling Method for High Power IGBTs

作　　者：刘欣[1] 王利桐 梁贵书[1] 齐磊 LIU Xin;WANG Litong;LIANG Guishu;QI Lei(Department of Electrical Engineering,North China Electric Power University,Baoding 071003,Hebei Province,China;State Key Laboratory of Alternate Electrical Power System with Renewable Energy Sources(North China Electric Power University),Haidian District,Beijing 102206,China)

机构地区：[1]华北电力大学电力工程系,河北省保定市071003 [2]新能源电力系统国家重点实验室(华北电力大学),北京市昌平区102206

出　　处：《中国电机工程学报》2023年第7期2826-2837,共12页Proceedings of the CSEE

基　　金：国家重点研发计划项目(2017YFB0902400)。

摘　　要：高压大功率绝缘栅双极晶体管(insulated gate bipolar transistor,IGBT)的准确建模对IGBT应用中的损耗计算、机理分析、骚扰特性预测有重要意义。基区载流子分布计算是IGBT建模的核心内容,对于计及不同注入条件下大功率IGBT载流子分布计算,现有模型存在计算量大或精度低等缺点。文中首先研究大功率IGBT工作过程中基区载流子的分布特性,然后,以准静态和非准静态条件下基区载流子分布的差异性为突破口提出一种快速、准确、适用于大功率IGBT的建模方法。依据器件内基区耗尽层的边界是处于栅极区域附近还是越过栅极区域,该方法将IGBT工作状态分为两部分,并分别基于准静态假设和非准静态假设对两部分建模。由此可在不失精度的情况下避免载流子二维分布计算,有效地减小在计及不同注入条件下的计算量。最后,通过与现有方法和试验对比,验证所提方法在精度和计算速度方面的优势。Modeling the high-power insulated gate bipolar transistor(IGBT)is of great significance to the loss calculation,mechanism analysis and disturbance characteristic prediction in application of IGBTs.The calculation for carrier distribution in the drift region is a key aspect for the IGBT modeling.When considering different injection conditions,the existing models have the disadvantages of large amount of calculation or poor accuracy for high power IGBTs.First,the carrier distribution characteristics of high power IGBTs are studied.Furthermore,based on the differences of carrier distributions under quasi static and non-quasi static conditions,a fast and accurate modeling method for high power IGBTs is proposed.Depending on whether the boundary of depletion region is around or above the gate region,the working states of a high power IGBT is divided into two parts in this method and modeled based on quasi static assumption and non-quasi static assumption respectively.This method can avoid the calculation of two-dimensional carrier distribution without losing accuracy,effectively reducing the amount of calculation at all injection levels.Finally,compared with the existing methods and experimental results,the advantages of the proposed method in terms of accuracy and calculation speed are verified.

关 键 词：大功率绝缘栅双极晶体管 静态输出特性 机理模型 载流子分布 不同注入条件 准静态和非准静态假设 

分 类 号：TM461[电气工程—电器]