铜基底上大尺寸石墨烯单晶的化学气相沉积法制备研究进展  

Research progress in synthesis of large-area single crystal graphene on copper by chemical vapor deposition

作　　者：张儒静 黄光宏 甄真 许振华 李娜 何利民 ZHANG Rujing;HUANG Guanghong;ZHEN Zhen;XU Zhenhua;LI Na;HE Limin(AECC Beijing Institute of Aeronautical Materials,Beijing 100095,China;Beijing Institute of Graphene Technology Co.,Ltd.,Beijing 100094,China)

机构地区：[1]中国航发北京航空材料研究院,北京100095 [2]北京石墨烯技术研究院,北京100094

出　　处：《材料工程》2023年第5期46-57,共12页Journal of Materials Engineering

基　　金：中国科协青年人才托举工程(YESS20200306)。

摘　　要：石墨烯的优异性能使其有望应用于未来的电子和光电器件中,采用化学气相沉积法进行石墨烯薄膜的可控制备有助于其在高性能器件中的大规模应用。然而多晶结构石墨烯薄膜中的大量晶界阻碍了载流子的快速传输,损害了材料的电学性能。大尺寸石墨烯单晶的获得能够减少薄膜中的晶界缺陷、极大提升石墨烯薄膜的质量。本文综述了大尺寸石墨烯单晶在铜基底上的化学气相沉积法制备研究,主要包括石墨烯晶片形核密度控制及取向一致石墨烯晶片的无缝拼接两种方法。重点从基底处理、反应区碳源分压控制、氧辅助生长等方面阐述了石墨烯单晶生长的不同实现途径、原理和特点。最后,分析目前制备方法中存在的挑战,并展望大尺寸石墨烯单晶的未来发展方向。探究石墨烯单晶的生长机制及动力学有助于实现在不同环境生长的精确控制,批量化低成本工艺开发和在多元化目标基底上的原位制备是实现石墨烯单晶大范围应用的关键。The exceptional properties of graphene provide a promising candidate in the future electrics and photoelectronic devices.The controllable synthesis of graphene films by chemical vapor deposition is of central importance for large-scale application of high-performance graphene devices.However,grain boundaries in polycrystalline graphene films hinder the fast transportation of carriers in the material,degrading the electrical properties.Large graphene single crystals could reduce the grain boundary defects and improve the quality of graphene films.In this review,approaches of the synthesis of large-area graphene single crystals on copper substrate by chemical vapor deposition were summarized,including two main strategies as decreasing the graphene nucleation density and seamless stitching of highly-oriented graphene islands.Different realization methods,mechanism and characteristics were clarified.Several key influence factors were discussed,such as the pretreatment of substrates,the controlling of partial pressure of carbon source and the oxygen-assisted growth,etc.Finally,existing challenges of the present preparation were analyzed.The synthesis trend of large-area graphene single crystals in the future was discussed.Exploration on the growth mechanisms and kinetics of graphene single crystals help to realize their precise growth control in different environments.Developments of mass production at low cost and in-situ synthesis on diverse target substrates are the keys to wide use of graphene single crystals.

关 键 词：石墨烯 单晶 化学气相沉积 形核密度 无缝拼接 

分 类 号：TB321[一般工业技术—材料科学与工程]