基于Al_(2)O_(3)/Chitosan叠层栅介质的双栅IGZO神经形态晶体管  

Dual-gate IGZO-based Neuromorphic Transistors withStacked Al_(2)O_(3)/Chitosan Gate Dielectrics

作　　者：王靖瑜 万昌锦 万青 WANG Jingyu;WAN Changjin;WAN Qing(School of Electronic Science and Engineering,Nanjing University,Nanjing 210093,China;School of Micro-Nano Electronics,Zhejiang University,Hangzhou 310027,China)

机构地区：[1]南京大学电子科学与工程学院,南京210093 [2]浙江大学微纳电子学院,杭州310027

出　　处：《无机材料学报》2023年第4期445-451,共7页Journal of Inorganic Materials

基　　金：国家重点研发计划(2019YFB2205400);国家自然科学基金(62074075,61834001)。

摘　　要：基于铟镓锌氧(IGZO)的双电层(EDL)晶体管以低加工温度、良好的一致性以及丰富的离子动力学等优势,在神经形态感知和计算系统中具有极大的潜在应用前景。然而,双电层IGZO晶体管的高漏电(>10 nA)导致的高能耗以及异常电流尖峰/毛刺一直是相关神经形态计算发展的主要障碍之一。本研究提出了一种具有Al_(2)O_(3)/壳聚糖(Chitosan)叠层栅介质的新型IGZO神经形态晶体管。与单层壳聚糖栅介质晶体管相比,引入Al_(2)O_(3)叠层的器件具有78.3 mV/decade的低亚阈值摆幅,在1.8 V电压下1.3 nA的低漏电流(降低约98%),3.73 V的大滞回窗口(提升3.4倍)以及0.86 nA的低兴奋性突触后电流(降低约97%),单脉冲(0.5 V,20 ms)功耗仅为1.7 pJ(降低约96%)。此外,研究还基于双栅EDL协同调控实现了尖峰突触功能的模拟和沟道电流的有效调制,并有效规避突触塑性模拟中高漏电导致的非正常电流尖峰/毛刺。上述结果表明,堆叠高k栅介质可以有效改善神经形态器件的漏电、功耗和性能,为进一步开发超低功耗神经形态感知和计算系统提供了新的思路。Indium-gallium-zinc-oxide(IGZO)-based electric-double-layer(EDL)transistors have great applications for neuromorphic perception and computing systems because of their low processing temperature,high homogeneity,and plentiful ionic dynamics.However,IGZO-based EDL transistors have problems of high leakage current(>10 nA),high energy consumption and abnormal current spikes,which are the main obstacles to the development of neuromorphic computing systems based on such devices.In this work,a novel IGZO neuromorphic transistor with Al_(2)O_(3)/chitosan stacked gate dielectric was proposed.Compared with the monolayer chitosan gate dielectric transistor,the device with Al_(2)O_(3)/chitosan layer showed low subthreshold swing of 78.3 mV/decade,a low gate leakage current of 1.3 nA(reduced by about 98%),a large hysteresis window of 3.73 V(increased by about 3.4 times),a low excitable postsynaptic current of 0.86 nA(decreased by about 97%)and an energy consumption of 1.7 pJ for a spike event(0.5 V,20 ms).Additionally,the emulation of spiking synaptic function and the synergistically modulation of the channel current were also realized,and the abnormal current spike caused by high leakage in synaptic plasticity simulation was also effectively avoided.The results suggest that the inserting of high-k dielectric layer can effectively improve the leakage current,energy consumption and performance of neuromorphic devices,which has substantial value for future ultra-low energy consumption neuromorphic perception and computing systems.

关 键 词：神经形态器件 IGZO晶体管 人造突触 叠层栅介质 高K栅介质 突触可塑性 

分 类 号：TN321[电子电信—物理电子学]