毫米波硅基SiP模块设计  

Design of a Millimeter-wave SiP Module Based on Silicon Interposer

作　　者：张先荣[1] ZHANG Xianrong(Southwest China Institute of Electronic Technology,Chengdu 610036,China)

机构地区：[1]中国西南电子技术研究所,成都610036

出　　处：《电讯技术》2023年第5期741-747,共7页Telecommunication Engineering

基　　金：装发部预先研究基金。

摘　　要：设计了一款采用硅基板作为载体的毫米波上变频微系统系统级封装(System in Package,SiP)模块。该模块利用类同轴硅通孔(Through-Silicon-Via,TSV)结构解决了毫米波频段信号在转接板层间低损耗垂直传输的问题。该结构整体采用四层硅基板封装,并在封装完成后对硅基射频SiP模块进行了测试。测试结果显示,在工作频段29~31 GHz之间,其增益大于27 dB,端口驻波小于1.4,且带外杂散抑制大于55 dB。该毫米波硅基SiP模块具有结构简单、集成度高、射频性能良好等优点,其体积不到传统二维集成结构的5%,实现了毫米波频段模块的微系统化,可广泛运用于射频微系统。A millimeter-wave up-conversion microsystem system in package(SiP)module is designed based on silicon interposer.Quasi-coaxially through-silicon-via(TSV)is used to realize low-loss transmission of vertical interconnection in the millimeter-wave microsystem integration process.The SiP module package uses four layers’silicon interposers,and the SiP module is measured.The measured results shows that,in the 29~31 GHz band,the gain is greater than 27 dB,the port voltage standing wave ratio(VSWR)is smaller than 1.4,and the stray rejection is larger than 55 dB.The SiP module has the merits of simple structure,high integration and good RF performances.Moreover,the size of the proposed module is less than 5%of the traditional two dimensional planar package structures,and the microsystematization of millimeter-wave band module is realized.The proposed module can be widely used in RF microsystems.

关 键 词：毫米波上变频系统 硅基转接板 系统级封装(SiP) 硅通孔(TSV) 

分 类 号：TN402[电子电信—微电子学与固体电子学]