晶圆级柔性高性能GaN HEMT及InP HBT器件  

Wafer Level High Performance Flexible GaN HEMT and InP HBT

作　　者：戴家赟 陈鑫 王登贵 吴立枢[1,2] 周建军 王飞[1,2] 孔月婵 陈堂胜 DAI Jiayun;CHEN Xin;WANG Denggui;WU Lishu;ZHOU Jianjun;WANGFei;KONG Yuechan;CHEN Tangsheng(Nanjing Electronic Devices Institute,Nanjing,210016,CHN;National Key Laboratory of Solid-state Microwave Devices and Circuits,Nanjing,210016,CHN)

机构地区：[1]南京电子器件研究所,南京210016 [2]固态微波器件与电路全国重点实验室,南京210016

出　　处：《固体电子学研究与进展》2023年第2期158-162,174,共6页Research & Progress of SSE

基　　金：国家重点研发计划资助项目(2020YFA0709700)。

摘　　要：通过研究基于临时键合与解键合工艺的GaN、InP等材料无损剥离和晶圆级柔性集成等关键技术,提出了解决当前柔性化合物半导体器件普遍存在的转移后器件性能退化严重和大面积批量制造困难等问题的方案,制备出100 mm(4英寸)柔性GaN HEMT器件和75 mm(3英寸)InP HBT器件。其中,柔性GaN HEMT器件的饱和电流衰减仅为8.6%,柔性InP HBT器件的电流增益截止频率和最高振荡频率分别达到了358 GHz和530 GHz。表明采用本文介绍的柔性化方法制备的柔性电子器件在高频大功率等领域具有较好的应用前景。There are several critical challenges that remain for flexible compound semiconductor electronics,such as great performance degradation after flexibilization and difficulties for mass production in wafer size.In this paper,we have studied the key technologies of non-destructive epitaxial layer peeling and wafer level flexible integration based on temporary bonding and debonding process.4-inch flexible GaN HEMT devices and 3-inch InP HBT devices are achieved.Among which,the maximum drain saturation current decreased by 8.6%after flexibilization for GaN HEMT,and the cut-off frequency and maximum oscillation frequency are 358 GHz and 530 GHz for InP HBT.The results indicate that the flexible electronic devices fabricated by proposed process have great potential for high frequency and high power fields.

关 键 词：晶圆级 柔性 化合物器件 GaN HEMT InP HBT 

分 类 号：TN325.3[电子电信—物理电子学]