高端电子制程中钴化学机械抛光剂的研究进展(Ⅱ)──配位剂、抑制剂、磨料及其他  

Progress in research of slurry for chemical mechanical polishing of cobalt during fabrication of high-end electronics:Part II-Complexing agent,inhibitor,abrasive,and others

作　　者：段欣雨 万传云 吴兆键 张玫姣 倪哲易 DUAN Xinyu;WAN Chuanyun;WU Zhaojian;ZHANG Meijiao;NI Zheyi(School of Chemistry and Environmental Engineering,Shanghai University of Applied Sciences,Shanghai 201418,China)

机构地区：[1]上海应用技术大学化学与环境工程学院,上海201418

出　　处：《电镀与涂饰》2023年第9期45-51,共7页Electroplating & Finishing

摘　　要：综述了Co作为高密度集成路电子制程的阻挡层及互连材料时,化学机械抛光液中常用配位剂、抑制剂、磨料及其他成分的研究进展和作用机制,展望了Co化学机械抛光液的发展。The research progress of complexing agent,inhibitor,abrasive,and other components commonly applied to the chemical mechanical polishing(CMP)of Co barrier and interconnect were reviewed.Their action mechanisms were described.The future development of Co CMP slurry was discussed.

关 键 词：钴 化学机械抛光 抛光液 配位剂 抑制剂 磨料 综述 

分 类 号：TG175[金属学及工艺—金属表面处理] TQ153.6[金属学及工艺—金属学]