GaN基半导体在改变钙钛矿太阳能电池性能方面的理论分析  

Theoretical analysis of GaN-based semiconductor in changing performanc of perovskite solar cell

作　　者：朱晓丽 仇鹏 卫会云 何荧峰 刘恒 田丰 邱洪宇 杜梦超 彭铭曾 郑新和 Zhu Xiao-Li;Qiu Peng;Wei Hui-Yun;He Ying-Feng;Liu Heng;Tian Feng;Qiu Hong-Yu;Du Meng-Chao;Peng Ming-Zeng;Zheng Xin-He(Beijing Key Laboratory for Magneto-Photoelectrical Composite and Interface Science,School of Mathematics and Physics,University of Science and Technology Beijing,Beijing 100083,China)

机构地区：[1]北京科技大学数理学院,磁光电复合材料与界面科学北京市重点实验室,北京100083

出　　处：《物理学报》2023年第10期323-333,共11页Acta Physica Sinica

基　　金：国家重点研发计划(批准号:2018YFA0703700);国家自然科学基金(批准号:52002021);中央高校基本科研业务费专项资金(批准号:FRF-IDRY-20-037)资助的课题。

摘　　要：GaN基半导体在光电子、电子器件已具有重要应用,如何结合其良好的电学特性进行其他应用方面的理论或实验探索,是当前新的研究课题.本文利用SCAPS-1D软件从理论上计算了GaN在FTO/GaN/(FAPbI3)0.85(MAPbBr3)0.15/HTL电池结构中电子传输的理论机制.结果表明,引入GaN后,电池的开路电压,转换效率明显提高.通过进一步分析准费米能级分裂、界面电场、界面复合率、耗尽层厚度等因素的变化规律,分析了GaN的厚度和掺杂浓度对电池开路电压等器件参数的影响,并从GaN作为电子传输层的物理机制方面进行了讨论.GaN-based semiconductor has been used in optoelectronics and electronic devices.It is a new research topic at present that how its good electrical properties are integrated together to explore other applications in theory or experiment.In this work,SCAPS-1D software is used to calculate the mechanism of GaN electron transport in an FTO/GaN/(FAPbI3)0.85(MAPbBr3)0.15/HTL perovskite solar cell(PSC)structure.The results show that when GaN is used in PSC,the Voc increases from 0.78 V to 1.21 V,PCE increases from 15.87%to 24.18%,and that the small conduction band cliff formed between GaN and the active layer can improve the efficiency of the cell.Quasi-Fermi level splitting,interfacial electric field,interfacial recombination rate and depletion zone thickness at different doping concentrations s are analyzed.The influences of GaN thickness and doping concentration on open-circuit voltage and other device parameters are investigated.The physical mechanism of GaN as an electron transport layer is discussed.With the increase of the thickness,the Jsc of this solar cell decreases gradually,but the change range is not large(24.13-23.83 mA/cm^(2)).The Voc decreases from 1.30 V to 1.21 V when the thickness of GaN exceeds 100nm,and then keeps stable.The power conversion efficiency changing regularity appears in the form of“pits”-first decreases,then increases,and finally keeps stable,with the highest efficiency being 24.76%and the corresponding GaN thickness being 245 nm.The FF shows a trend,which is first decreasing,then increasing,and finally leveling off.In the case of the doping concentration and thickness change at the same time,during the increase of doping concentration,the Jsc decreases gradually with the increase of thickness,but the overall change range is small,and the open-circuit voltage,filling factor and conversion efficiency all show“pits”changes.When the thickness of GaN is 200 nm,with the concentration of GaN doping increasing,the quasi Fermi level splitting increases,and the strength of the built-in e

关 键 词：GAN 钙钛矿电池 开路电压 

分 类 号：TM914.4[电气工程—电力电子与电力传动]