8英寸Si基GaN HEMT薄膜材料的制备和研究  

Fabrication and Research of 8-inch Si Based GaN HEMT Thin Films

作　　者：吴勇 WU Yong(XIDIAN-WUHU RESEARCH INSTITUTE)

机构地区：[1]西安电子科技大学芜湖研究院

出　　处：《中国集成电路》2023年第5期86-90,共5页China lntegrated Circuit

摘　　要：氮化镓作为第三代半导体材料的代表,具有禁带宽度大、电子饱和速度高、热导率高、临界击穿电压高等优异的材料性能,所以在高频、高压、大功率器件方面具有非常广泛的应用前景。考虑到尺寸及成本的优势,在Si衬底上外延GaN已成为主要研究热点。通过使用MOCVD(金属有机化学气相沉积系统)成功在8英寸Si衬底上外延生长出AlGaN/GaN HEMT薄膜材料,结果表明外延片光滑无裂纹、具有低翘曲度、高均匀性、高结晶质量以及高的导通能力和耐压能力。As the representative of the third generation semiconductor materials,gallium nitride has excellent material properties such as large band gap,high electron saturation speed,high thermal conductivity,high critical breakdown voltage,etc.,so it has a very broad application prospect in high-frequency,high-voltage,high-power devices.Considering the advantages of size and cost,GaN epitaxy on Si substrate has become a major research focus.AlGaN/GaN HEMT thin film materials was successfully grown on 8 inch Si substrate by using MOCVD(Metal Organic Chemical Vapor Deposition System).The results showed that the epitaxial wafer was smooth and crack-free,with low warpage,high uniformity,high crystal quality,and high conductivity and pressure resistance.

关 键 词：8英寸Si衬底 高电子迁移率晶体管 二维电子气 外延生长 

分 类 号：TN386[电子电信—物理电子学] TB383.2[一般工业技术—材料科学与工程]