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作 者:吴子博 宋悦 牛屾 白佳明 吕志勇 单肖楠[2,3] WU Zi-bo;SONG Yue;NIU Shen;BAI Jia-ming;LV Zhi-yong;SHAN Xiao-nan(School of Opto-Electronics Information Science and Engineering,Changchun College of Electronic Technology,Changchun 130061,China;State Key Laboratory of Luminescence and Applications,Changchun Institute of Optics,Fine Mechanics and Physics,Chinese Academy of Sciences,Changchun 130033,China;School of Daheng,University of Chinese Academy of Sciences,Beijing 100049,China;School of Physics,Jilin University,Changchun 130015,China;School of Physics(School of Microelectronics),Zhengzhou University,Zhengzhou 450001,China)
机构地区:[1]长春电子科技学院光电信息科学与工程学院,吉林长春130061 [2]中国科学院长春光学精密机械与物理研究所发光学及应用国家重点实验室,吉林长春130033 [3]中国科学院大学大珩学院,北京100049 [4]吉林大学物理学院,吉林长春130015 [5]郑州大学物理学院(微电子学院),河南郑州450001
出 处:《激光与红外》2023年第5期643-650,共8页Laser & Infrared
基 金:国家自然科学基金项目(No.61904179);长春市科技发展计划项目重点研发计划项目(No.21ZGG13);中国科学院长春光学精密机械与物理研究所科创计划项目资助。
摘 要:大功率半导体激光器具有体积小、重量轻、转换效率高等优势,在工业加工、军事国防、医疗美容等各个领域具有广泛的应用。然而,大功率半导体激光器仍然受到电极失效的影响,导致其可靠性下降,使用寿命变短。本文首先阐述了大功率半导体激光器电极的失效机理;其次,介绍了电极的制备与欧姆接触评估方法,以及电极的失效分析手段方法,最后归纳了欧姆接触工艺的改良方法。在本文研究过程当中,归纳总结了目前学者们对于欧姆接触不良研究的相关进展,对进一步解决电极失效,提高大功率半导体激光器的可靠性具有重要的意义。High-power semiconductor lasers have the advantages of small size,light weight,and high conversion efficiency,and are widely used in various fields such as industrial processing,military defense,and medical aesthetics.However,high-power semiconductor lasers still suffer from electrode failure,resulting in reduced reliability and shorter service life.Firstly,the failure mechanism of high-power semiconductor laser electrode is described;secondly,electrode preparation and ohmic contact assessment methods are introduced,as well as electrode failure analysis techniques,and finally the improvement methods of the ohmic contact process is summarized.In the research process of this paper,the progress of the current research on ohmic contact failure is summarized,which is important for further solving electrode failure and improving the reliability of high-power semiconductor lasers.
分 类 号:TN248.4[电子电信—物理电子学]
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