压接式IGBT和晶闸管器件失效模式与机理研究综述  

Review on Failure Mode and Mechanism of Press-Pack IGBT and Thyristor Devices

作　　者：罗皓泽[1] 陈忠 杨为 谢佳 胡迪 官玮平 LUO Haoze;CHEN Zhong;YANG Wei;XIE Jia;HU Di;GUAN Weiping(College of Electrical Engineering,Zhejiang University,Hangzhou 310027,China;Electric Power Research Institute of State Grid Anhui Electric Power Co.,Ltd.,Hefei 230601,China;State Grid Anhui Electric Power Co.,Ltd.,Hefei 230022,China)

机构地区：[1]浙江大学电气工程学院,浙江杭州310027 [2]国网安徽省电力有限公司电力科学研究院,安徽合肥230601 [3]国网安徽省电力有限公司,安徽合肥230022

出　　处：《中国电力》2023年第5期137-152,共16页Electric Power

基　　金：国网安徽省电力有限公司科技项目(52120522000H)。

摘　　要：高压大容量压接式绝缘栅双极型晶体管(insulated gate bipolar transistor,IGBT)器件和晶闸管器件是高压直流输电工程中的核心器件,对能源的高效利用具有重要意义。IGBT和晶闸管等器件可靠性已成为电工装备乃至整个电力系统能够稳定可靠运行的关键问题。首先,从压接式器件传统封装结构入手,介绍了压接式器件的弹簧式多芯片封装和凸台式多芯片/单芯片封装,对比了3种封装结构的性能。其次,阐述了压接式器件封装级失效模式与机理,结果表明热膨胀系数不匹配是封装级失效的最主要原因。同时,也对IGBT和晶闸管芯片级失效做了梳理,结果表明电气过应力是芯片级失效的主要原因。然后,简单阐述了压接式器件的新型封装结构与技术。最后,展望了压接式器件未来可能的研究重点。High voltage and large capacity press-pack insulated gate bipolar transistor(IGBT)devices and thyristor devices are the core devices in high-voltage DC transmission projects,which are of great significance for the efficient use of energy.The reliability of IGBT and thyristor has become a key problem for the stable and reliable operation of electrical equipment and even the entire power system.Firstly,starting from the traditional packaging structure of press-pack devices,this paper introduces the spring multichip packaging and convex multi-chip/single-chip packaging of press-pack devices,and compares the performance of three packaging structures.Then,the package-level failure mode and mechanism of press-pack devices are investigated,and the results show that the mismatch of the thermal expansion coefficient is the main reason for package-level failure.At the same time,the chiplevel failures of IGBT and thyristor are also investigated,and it is found that electrical overstress is the main reason for chip-level failures.Thirdly,the new packaging structure and technology of press-pack devices are briefly introduced.Finally,future research focus on press-pack devices are discussed.

关 键 词：压接式器件 IGBT 晶闸管 失效模式与机理 封装结构 

分 类 号：TN34[电子电信—物理电子学] TN322.8