直拉单晶硅生长中的碳污染  

Carbon Pollution in Czochralski Silicon Growth

作　　者：王大海 邓昌联 Wang Dahai;Deng Changlian(Technology department Sichuan Jingke Energy Co.,Ltd.,Leshan 614000;EHSS department Sichuan Jingke Energy Co.,Ltd.,Leshan 614000,China)

机构地区：[1]四川晶科能源有限公司技术部,四川乐山614000 [2]四川晶科能源有限公司EHSS部,四川乐山614000

出　　处：《广东化工》2023年第10期90-91,112,共3页Guangdong Chemical Industry

摘　　要：直拉单晶硅主要应用于微电子集成电路和太阳能电池方面。碳的污染可通过形成碳诱导缺陷导致硅晶片退化。因此,本文聚焦硅晶体生长过程,探索碳迁移机制和减少碳污染的方法。坩埚和基座之间的接触反应是一氧化硅和一氧化碳的来源。在熔炼过程中,硅原料中碳元素的积累取决于一氧化碳的反向扩散。有边界的气体流动可以抑制反扩散,并且增加气体流量可以比降低压力更有效地减少熔体中的碳积累。根据碳污染的积累机制,总结了减少碳生成和掺入的策略,比如通过降低一氧化碳生成速率、减少持续时间、增加气体流速、应用碳化硅涂层等减少碳污染。Czochralski silicon is mainly used in microelectronic integrated circuits and solar cells.Carbon contamination can lead to silicon wafer degradation by the formation of carbon-induced defects.Therefore,this paper focuses on the growth process of silicon crystal to explore the mechanism of carbon migration and the methods to reduce carbon pollution.The contact reaction between the crucible and the base is the source of silicon monoxide and carbon monoxide.In the smelting process,the accumulation of carbon element in silicon raw material depends on the reverse diffusion of carbon monoxide.The gas flow with boundary can inhibit the reverse diffusion,and increasing the gas flow can reduce the carbon accumulation in the melt more effectively than reducing the pressure.According to the accumulation mechanism of carbon pollution,strategies to reduce carbon generation and incorporation are summarized,such as reducing carbon monoxide generation rate,reducing duration,increasing gas flow rate,and applying silicon carbide coating to reduce carbon pollution.

关 键 词：直拉法 单晶硅 碳污染 接触反应 反向扩散 

分 类 号：TN304.12[电子电信—物理电子学]