一种高功率射频MEMS开关设计  

Design of A High Power RF MEMS Switch

作　　者：宁朝东 吴倩楠[2,3,4] 王俊强 李孟委 NING Chaodong;WU Qiannan;WANG Junqiang;LI Mengwei(School of Instrument and Electronics,North University of China,Taiyuan 030051;Academy for Advanced Interdisciplinary Research,North University of China,Taiyuan 030051;Center for Microsystem Intergration,North University of China,Taiyuan 030051;School of Semiconductor and Physics,North University of China,Taiyuan 030051)

机构地区：[1]中北大学仪器与电子学院,太原030051 [2]中北大学前沿交叉科学研究院,太原030051 [3]中北大学微系统集成研究中心,太原030051 [4]中北大学半导体与物理学院,太原030051

出　　处：《舰船电子工程》2023年第2期185-189,共5页Ship Electronic Engineering

基　　金：2020年装备发展部型谱项目(编号:2006WW0011)资助。

摘　　要：随着无线通信设备小型化以及宽通信范围的需求导致器件的功率密度要求越来越高。射频前端接收器和基站天线等射频通信应用要求开关能处理1W~2W的射频信号。论文设计了一种低损耗、高功率容量的四触点射频MEMS开关。文中对四触点射频MEMS开关基地材料和上电极结构进行优化,提升了四触点射频MEMS开关的射频性能和功率容量。经HFSS电磁仿真可知:该射频MEMS开关在L~K波段内,插入损耗≤0.2GHz,隔离度≥27dB,经理论计算,该射频MEMS开关的功率容量为2.17W。With the miniaturization of wireless communication equipment and the requirement of wide communication range,the power density requirement of devices becomes higher and higher.RF communication applications,such as front-end receiver and base station antenna,require that the switch can handle 1W~2W RF signals.In this paper,a four-contact RF MEMS switch with low loss and high power capacity is designed.In this paper,the base material and upper electrode structure of the four-contact RF MEMS switch are optimized,and the RF performance and power capacity of the four-contact RF MEMS switch are improved.HFSS electromagnetic simulation shows that the RF MEMS switch has insertion loss ≤0.2GHz and isolation ≥27dB in L~K band,and its power capacity is 2.17W by theoretical calculation.

关 键 词：功率容量 射频MEMS开关 触点 

分 类 号：TN631[电子电信—电路与系统]