Parametric study on controllable growth of SrZrS_(3)thin films with good conductivity for photodetectors  

作　　者：Yurun Liang Yuewen Zhang Jie Xu Jingli Ma Huifang Jiang Xin Li Baolin Zhang Xu Chen Yongtao Tian Yanbing Han Zhifeng Shi 

机构地区：[1]Key Laboratory of Materials Physics of Ministry of Education,School of Physics and Microelectronics,Zhengzhou University,Daxue Road 75,Zhengzhou 450052,China

出　　处：《Nano Research》2023年第5期7867-7873,共7页纳米研究（英文版）

基　　金：the National Natural Science Foundation of China(Nos.62104215 and 12074347);China Postdoctoral Science Foundation(Nos.2020M672257 and 2020TQ0286);Natural Science Foundation of Henan Province of China(No.202300410439);Department of Science and Technology of Henan Province of China(No.202102210214).

摘　　要：SrZrS_(3)is a promising chalcogenide perovskite with unique advantages including high abundance of consisting elements,high chemical stability,strong light absorption above its direct band gap,excellent carrier transport ability.While unfortunately,due to the lack of breakthroughs in its thin film synthesis technique,its optoelectronic properties are not fully investigated,not to mention the device applications.In this work,large-area and uniform SrZrS_(3)thin film(5 cm×5 cm)was prepared by facile sputtering method,followed by a post-annealing treatment at a high temperature of 1000℃for 2–12 h under CS_(2)atmosphere.All SrZrS_(3)samples prepared adopt distorted orthorhombic structure with pnma space group and have high crystallinity.In addition,the band gap of SrZrS_(3)thin film is measured to be 2.29 eV,higher than that of the powder form(2.06 eV).Importantly,the light absorption coefficient of SrZrS_(3)thin film reaches over 105 cm^(−1),the carrier mobility is as high as 106 cm^(2)/(V∙s).The above advantages allow us to use the SrZrS_(3)thin film as photoactive layer for photodetector applications.Finally,a symmetrically structured photoconductive detector was fabricated,performing a high responsivity of 8 A/W(405 nm light excitation).These inspiring results promise the glorious application potential of SrZrS_(3)thin film in photodetectors,solar cells,other optoelectronic devices.

关 键 词：chalcogenide perovskite thin film SrZrS_(3) SPUTTER PHOTODETECTOR 

分 类 号：TB34[一般工业技术—材料科学与工程]