单晶金刚石异质外延用铱复合衬底研究现状  

Research Status of Iridium-Based Composite Substrates for Heteroepitaxy of Single Crystal Diamond

作　　者：屈鹏霏 金鹏[1,2] 周广迪 王镇 许敦洲 吴巨 郑红军[1] 王占国[1,2] QU Pengfei;JIN Peng;ZHOU Guangdi;WANG Zhen;XU Dunzhou;WU Ju;ZHENG Hongjun;WANG Zhanguo(Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100049,China)

机构地区：[1]中国科学院半导体研究所,北京100083 [2]中国科学院大学材料与光电研究中心,北京100049

出　　处：《人工晶体学报》2023年第5期857-877,共21页Journal of Synthetic Crystals

基　　金：国家重点研发计划(2022YFB3608602);北京市科技计划(Z181100004418009);国家自然科学基金(61927806)。

摘　　要：金刚石优异的物理性质使其成为下一代最有发展潜力的半导体材料之一。目前来看,基于微波等离子体化学气相沉积的异质外延可能是未来制备大尺寸单晶金刚石的最佳方法。在过去的三十年间,铱复合衬底上异质外延生长单晶金刚石取得了一定进展,特别是近几年实现了2英寸(1英寸=2.54 cm)以上的大尺寸自支撑单晶金刚石的生长。本文总结了金刚石异质外延用的衬底,简要介绍了异质衬底上的偏压增强成核,详细介绍了目前最成功的铱/氧化物、铱/氧化物层/硅复合衬底,最后对金刚石异质衬底和异质外延进行了总结,指出目前存在的问题并给出了一些可能的解决思路。The excellent physical properties of diamond make it one of the most promising semiconductor materials for the next generation.At present,heteroepitaxy based on microwave plasma chemical vapor deposition may be the best method for preparing large-scale single crystal diamond in the future.In the past three decades,some progress has been made in the heteroepitaxial growth of single crystal diamond on iridium-based composite substrates,especially in recent years,the growth of large-scale single crystal diamond of more than 2 inch has been realized.This paper summarizes the various substrates used for diamond heteroepitaxy,briefly introduces bias-enhanced nucleation on heterogeneous substrates,and details the most successful iridium/oxide,iridium/oxide layer/silicon composite substrates.In the end,the problems existing in diamond heterogeneous substrates and heteroepitaxy are summarized,and some possible solutions are given.

关 键 词：金刚石 铱复合衬底 半导体 异质外延 偏压增强成核 微波等离子体化学气相沉积 

分 类 号：O78[理学—晶体学] TN304[电子电信—物理电子学]