用于GaN驱动芯片的低功耗高可靠高侧供电电路  

Low Consumption High Reliability High-Side Supply Circuit Applied in GaN Driver Chips

作　　者：胡一凡 王勇 孔瀛 王瑛 彭领 李易昂 Hu Yifan;Wang Yong;Kong Ying;Wang Ying;Peng Ling;Li Yi'ang(Beijing Microelectronics Technology Institute,Beijing 100076,China)

机构地区：[1]北京微电子技术研究所,北京100076

出　　处：《半导体技术》2023年第5期389-396,402,共9页Semiconductor Technology

摘　　要：高侧供电电路对GaN驱动芯片的可靠性和功耗有非常重要的影响。设计并实现了一种低功耗高可靠的高侧供电电路。考虑到GaN器件的低栅源击穿电压及其反向导通特性,通过自举钳位稳压设计将低压差线性稳压器(LDO)直接搭建在高侧通路以实现对GaN器件栅源电压的保护,此外通过设计抗高侧地HS负压的电平位移电路以实现在高频、高噪声条件下GaN驱动芯片能够正常工作。该高侧供电电路基于0.18μm BCD工艺设计并流片,测试结果表明,集成该高侧供电电路的GaN驱动芯片的高侧输出端能够在最大90 V/ns的电压转换速率或最小25 ns脉宽的输入脉冲下输出最大压差5 V的方波信号,具有良好的性能。The high-side supply circuit has a significant influence on the reliability and consumption of GaN driver chip.A low consumption and high reliablility high-side supply circuit was designed and realized.Considering the characteristics of low gate-source breakdown voltage and reverse conduction of GaN devices,a low dropout regulator(LDO)was directly built in the high-side channel through bootstrap clamp regulation design to realize the gate-source voltage protection for GaN devices,Additionally,the GaN driver chip can operate normally under high frequency and large noise conditions through the circuit design of anti negative voltage level shift at high-side ground.The high-side supply circuit was designed and implemented based on 0.18μm BCD process.The test results show the high-side output terminal of GaN driver chip which integrated the proposed high-side supply circuit can output a square wave signal with a maximum voltage drop of 5 V under a maximum slew rate of 90 V/ns or minimum input pulse width of 25 ns,which can achieve good performances.

关 键 词：GAN 栅极驱动器 高侧供电电路 电压转换速率 电平位移电路 

分 类 号：TN786[电子电信—电路与系统] TN43