高密度封装垂直出射窄脉冲半导体激光模块  

High-Density Package and Vertical Emission Narrow-Pulse Semiconductor Laser Module

作　　者：崔璐 张厚博 李晓红 李松松 张港 王晓燕[1] Cui Lu;Zhang Houbo;Li Xiaohong;Li Songsong;Zhang Gang;Wang Xiaoyan(The 13"Research Institute,CETC,Shjiazhuang 050051,China)

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050051

出　　处：《半导体技术》2023年第5期421-426,共6页Semiconductor Technology

摘　　要：针对采用边发射半导体激光器芯片进行多线集成窄脉冲半导体激光模块设计时,存在激光器芯片的排布位置受限、排列密度受限及发射板光轴方向尺寸较大等问题,研制了高密度封装垂直出射窄脉冲半导体激光模块。首先分析了寄生参数对驱动能力的影响,通过减小寄生电感和寄生电阻以获得高峰值窄脉冲驱动电流;然后进行芯组设计,通过设计侧面金属化陶瓷载体,将激光器芯片电极从陶瓷载体侧面引出,该结构将激光器芯片出光方向旋转90°,实现了激光垂直板面出射和板面自由排布,同时极大地压缩了光轴方向尺寸;最后将芯组和驱动电路进行整体设计,在密集排列的同时兼顾关键电路的均匀布局,实现了16线激光器芯片0.7 mm间隔的高密度排布和垂直板面出光。测试结果显示,模块的单路峰值输出功率约为80 W,脉冲宽度约为6 ns,功率不一致性≤5%。Aiming at the problems in designing narrow-pulse semiconductor laser module with multiline integration using edge emitting semiconductor laser chip,such as the limited position and density of the laser chip arrangement,and the large size of the emitter plate in the optical axis direction,a highdensity package and vertical emission narrow-pulse semiconductor laser module was developed.Firstly,the influence of parasitic parameters on drive ability was analyzed,and the drive current with high peak value and narrow pulse was obtained by reducing parasitic inductance and resistance.Then,the laser chip component was designed.The electrode of the laser chip was drawn out from the side of the ceramic carrier by designing the side metallized ceramic carrier.The structure rotated the light-emitting direction of the laser chip by 90°,achieving the vertical laser emission and free arrangement of the plate surface,and the optical axis direction size was greatly compressed at the same time.Finally,the overall design of the laser chip component and drive circuit was carried out.The 16-line laser chips were packed together at a high density with 0.7 mm interval and vertical plate laser emission,and the uniform layout of the key circuit was taken into account in the dense arrangement.The test results show that the single channel peak output power of the module is about 80 W with a pulse width of about 6 ns,and the power dispersion is not greater than 5%.

关 键 词：半导体激光器 窄脉冲驱动 高密度封装 垂直出射 多线集成 

分 类 号：TN248.4[电子电信—物理电子学]