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作 者:方亮[1,2,4] 汪为民[5] 王强 程欣 范真节[1,2] 张辉[1,2,4] 赵汝进 刘恩海[1,2,4] FANG Liang;WANG Weimin;WANG Qiang;CHENG Xin;FAN Zhenjie;ZHANG Hui;ZHAO Rujin;LIU Enhai(Institute of Optics and Electronics,Chinese Academy of Sciences,Chengdu 610209,China;Key Laboratory of Science and Technology on Space Optoelectronic Precision Measurement,Chinese Academy of Sciences,Chengdu 610209,China;State Key Laboratory of Optical Technologies on Nano-fabrication and Micro-engineering,Chinese Academy of Sciences,Chengdu 610209,China;University of Chinese Academy of Sciences,Beijing 100049,China;Defense Key Disciplines Laboratory of Novel Micro-nano Devices and System Technology,Chongqing University,Chongqing 400044,China)
机构地区:[1]中国科学院光电技术研究所,成都610209 [2]中国科学院光电精密测量技术重点实验室,成都610209 [3]微细加工光学技术国家重点实验室,成都610209 [4]中国科学院大学,北京100049 [5]重庆大学新型微纳器件与系统技术国防重点学科实验室,重庆400044
出 处:《光子学报》2023年第4期74-84,共11页Acta Photonica Sinica
基 金:国家重点研究发展计划(No.2019YFA0706001);中国科学院“西部之光”人才培养引进计划(No.YA19K008)。
摘 要:针对全天时星敏感器视场选通成像系统的应用需求,设计了一种基于静电驱动的单元尺寸为4 mm、开口面积占空比为90%、响应时间为25 ms、单元数为7×7的微开关阵列。考虑到微开关阵列体硅加工工艺中材料的特性,首先确定电极宽度、支撑梁宽度和支撑梁厚度等参数,再根据微开关单元结构的数学模型对支撑梁数目及长度进行理论分析,优化设计了微开关阵列主要结构参数。利用电磁场仿真软件和有限元仿真软件对微开关单元的驱动特性进行仿真分析,结果表明,仿真计算的微开关单元驱动电压为106.4 V时可以开启微开关单元,与理论计算结果114 V基本吻合,验证了微开关阵列设计参数的可行性。此外,利用杂光分析软件对微开关阵列引入系统内的杂散光进行仿真分析,结果表明,微开关阵列的表面反射率对系统杂散光的影响较小,即使80%的表面反射率也不会明显增加视场选通成像系统的杂散光。该研究为视场选通成像系统的微开关阵列提供了一种有效的设计方案,推动了视场选通成像系统的实际应用。Traditional all-time star sensors usually have a narrow Field of View(FOV)and adopt single star tracking mode.Because of only one target star in the FOV,the optical system should be installed on a two-dimensional rotation/scanning platform,or multiple telescopes are used to achieve synchronous measurement,which can lead to many shortcomings such as large volume,low reliability and poor autonomy.The optical imaging system based on FOV gated technology can obtain the wide FOV and strong sky background radiation suppression ability at the same time by combining a large total FOV with a narrow gated FOV,which is expected to achieve multi-star detection and star pattern recognition in the daytime.It has the advantages of small volume,light weight and good autonomy.In the FOV gated optical imaging system,it is necessary to use a key device of microshutter array to quickly switch the gated FOV.Microshutter arrays need to have the characteristics of large element size,high duty cycle and high response speed.At present,there is no microshutter array that meets the requirements can be used.In this paper,a short-wave infrared band FOV gated imaging system principal prototype is designed.In this system,two sets of microlens arrays are used,the aperture of the microlens element is 4 mm,the FOV gated imaging channel number is 7×7,and each imaging channel can obtain near diffraction limit imaging quality.The microshutter array is placed behind two sets of microlens arrays,and the size of the microshutter element is also 4 mm.The position of the microshutter element corresponds to that of the microlens element one by one.In order to meet the application requirements of the FOV gated imaging system,the main design parameters of the microshutter element are determined as follows.The area duty cycle is not less than 90%,the switching response time is not less than 25 ms,and the drive voltage is not more than 120 V.Based on the principle of electrostatic parallel plate capacitive drive and the MEMS bulk silicon process,two rectangu
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