GaN:Eu,Dy薄膜的结构和发光特性研究  

Structural and Luminescent Properties of GaN:Eu,Dy Films

作　　者：陈华军 罗璇 王晓丹[1] 毛红敏[1] 曾雄辉[2] 徐科[2] Chen Huajun;Luo Xuan;Wang Xiaodan;Mao Hongmin;Zeng Xionghui;Xu Ke(School of Physics and Technology Science,University of Science and Technology of Suzhou,Suzhou 215009,China;Suzhou institute of Nano-Tech and Nano-Bionics,Chinese Academy of Science,Suzhou 215123,China)

机构地区：[1]苏州科技大学物理科学与技术学院,江苏苏州215009 [2]中国科学院苏州纳米技术与纳米仿生研究所,江苏苏州215123

出　　处：《稀有金属》2023年第3期381-389,共9页Chinese Journal of Rare Metals

基　　金：国家自然科学基金项目(61974158,61306004);江苏省自然科学基金项目(BK20191456,BK20221263);“十四五”江苏省重点学科项目(2021135);江苏省研究生科研创新计划项目(KYCX22_3266)资助。

摘　　要：通过离子注入方法制备了一系列稀土Eu和Dy掺杂的GaN薄膜,研究了其结构、发光特性和能量传递机制。拉曼(Raman)光谱和X射线衍射(XRD)的研究一致表明:当Eu剂量保持不变时,随着Dy剂量增加,GaN晶格应变出现了先张应变后压应变的变化趋势。阴极荧光(CL)光谱表明:Eu,Dy共掺GaN样品的发光峰和单掺GaN样品的发光峰基本一致,这说明Eu和Dy共掺时并没有显著改变彼此的局域晶体场环境。在GaN中,对于Eu离子,^(5)D_(0)→^(7)F_(2)跃迁所对应的625 nm发光最强;对于Dy离子,^(4)F_(9/2)→^(6)H_(13/2)对应的583 nm发光最强。在Eu离子剂量保持不变的情况下,随着Dy离子注入剂量的增加,583 nm的发光逐渐变强,而625 nm的发光变弱。进一步,结合计算分析表明Eu离子主要通过电偶极-电偶极共振方式传递能量给Dy离子。最后发现随着离子注入剂量的改变,发光颜色在白色和红色间变化,色温在3889~4839 K变化。With the global energy shortage,solid light-emitting materials with high efficiency,energy saving and environmental pro⁃tection has become more and more important in lighting materials.Among them,GaN-based semiconductor light-emitting diodes(LEDs)have been developed rapidly.Traditionally,GaN-based LEDs changed the emission wavelength by changing the content of In component.At present,due to the phase segregation of In,low mutual solubility,and the fact that the spectral lines were easily affected by current and other factors,the commercialization of white LEDs and red LEDs was in progress.Rare earth(RE)ions could undergo radiation transitions in their 4f electron layers,and are not easily affected by the external environment.The emitted light was sta⁃ble,monochromatic,high-intensity.Therefore,the doping of rare earth ions in GaN host would avoid the above-mentioned traditional GaN-based LEDs question.Dysprosium(Dy)ions could emit blue and yellow light,but the red light was weak.Europium(Eu)ions could emit bright red light.The co-doping of Eu and Dy was expected to achieve white and other visible light emission.In this paper,a series of Eu,Dy doped GaN samples were prepared by ion implantation.Their structure,luminescence and energy transfer mechanism were investigated.GaN thin films were epitaxially grown by metal-organic chemical vapor deposition(MOCVD),and then GaN thin films were uniformly doped with different doses of Eu and Dy ions by ion implantation.Finally,the samples were placed at 1000℃in a flowing NH3 atmosphere for high temperature annealing treatment that was used to repair lattice damage and activate rare earth ions.The structural and luminescent properties of GaN:Eu,Dy were analyzed by Raman scattering spectroscopy,X-ray diffraction(XRD)patterns and cathodoluminescence spectroscopy.The energy transfer mechanism in GaN:Eu,Dy was calculated and analyzed accord⁃ing to Dexter multipole energy transfer theory and Reisfeld approximation theory.And the luminescence color change was analyzed by chr

关 键 词：铕离子 镝离子 氮化镓 离子注入 发光特性 结构特性 

分 类 号：TN304.3[电子电信—物理电子学]