垂直氮化镓功率晶体管及其集成电路的发展状况  

Recent progress on the vertical GaN power transistor and its integrated circuit

作　　者：李博 尹越 阳志超 刘新科[1] 李京波 Bo Li;Yue Yin;Zhichao Yang;Xinke Liu;Jingbo Li(Guangdong Research Center for Interfacial Engineering,College of Materials Science and Engineering,Shenzhen University,Shenzhen 518071,China;China State Construction Technical Center,Beijing 101300,China;Dongguan South Semiconductor Technology Co.,Ltd,Dongguan 523781,China;Institute of Semiconductors,South China Normal University,Guangzhou 510631,China)

机构地区：[1]深圳大学材料学院,广东省功能材料界面工程技术研究中心,深圳518071 [2]中国建筑技术中心,北京101300 [3]东莞南方半导体科技有限公司,东莞523781 [4]华南师范大学半导体科学技术研究院,广州510631

出　　处：《科学通报》2023年第14期1727-1740,共14页Chinese Science Bulletin

基　　金：国家自然科学基金(61974144,62004127);广东省重点领域研究发展计划(2020B010174003);广东省杰出青年科学基金(2022B1515020073);深圳市科学技术基金(JSGG20191129114216474)资助。

摘　　要：氮化镓作为第三代宽禁带半导体材料的代表之一,因其优越的性能,例如高电子迁移率、高电子饱和速率、耐高温及高热导率等优点吸引了越来越多的关注.也正是因为这些优点,垂直氮化镓功率晶体管在未来的电力电子领域中具有很大的发展和广泛的应用前景.本文列出了氮化镓材料和其他半导体材料主要的物理参数、氮化镓单晶制备及其外延生长的主要方法,阐述了氮化镓功率器件在目前环境下的优势.针对器件结构,列出了横向器件本身存在的问题和垂直器件的优点,解释了垂直器件为何能够成为未来功率器件的主流结构.在此基础上,详细介绍了氮化镓电流孔径垂直晶体管、垂直氮化镓沟槽金属氧化物半导体场效应晶体管、基于原位氧化物氮化镓夹层的垂直沟槽金属氧化物半导体场效应晶体管和垂直氮化镓鳍式场效应晶体管的结构、工作原理、研究进展及所存在的一些问题,并将文中所提及的垂直氮化镓功率晶体管的性能参数按器件种类和时间顺序进行归纳,为未来氮化镓功率晶体管的发展提出了大致的方向.针对集成电路系统,归纳了氮化镓功率器件在驱动芯片方面的特殊要求和关键技术.最后,针对当下的市场环境,列举了垂直氮化镓功率晶体管在中、低压范围内比较热门且发展前景较好的应用场景.Silicon(Si)material is the mainstream semiconductor material for a long time because of its relatively excellent hightemperature resistance,radiation resistance,low price,and huge reserves.However,with the rapid development of power electronics technology,the development of technology has reached a bottleneck period,and Moore’s law has gradually failed.The existing silicon-based semiconductor devices are close to the theoretical limit of Si materials and can no longer meet the performance requirements of future power devices.However,the cost of transistors is constantly rising,and the performance improvement is slow,gradually moving towards the post-Moore era.To further improve the performance of the device,it is necessary to seek new technologies or new materials to support the continuous development of power devices,and the core of the progress of power semiconductor devices is the development of semiconductor materials.As the third generation of wide band gap semiconductors,gallium nitride(GaN)has been superior to Si in terms of material properties.GaN has the advantages of a wide band gap,high critical field strength,high electron saturation velocity,high conductivity,high-temperature resistance,and high voltage resistance.Compared with traditional Si-based power devices,it not only has higher breakdown voltage,low on-resistance,high electron mobility and good thermal conductivity,but also has smaller device volume and better heat dissipation performance under the same performance,which greatly reduces power consumption and achieves the effect of energy saving and emission reduction.The cost of early GaN single crystal preparation and epitaxial growth is beyond reach.However,with the mature development of growth technology,not only the cost of GaN single crystal substrate and its epitaxial growth is decreasing,but also the quality is gradually increasing,which lays a solid foundation for the wide application of GaN power devices in the future.This paper lists the main physical parameters of GaN and other se

关 键 词：氮化镓 外延生长 垂直氮化镓晶体管 氮化镓驱动集成电路 

分 类 号：TN386[电子电信—物理电子学]