气相沉积全无机钙钛矿传输层和发光层提高红光钙钛矿发光二极管性能  

Vapor Deposition of All Inorganic Perovskite Transport Layer and Emission Layer to Improve Performance of Red Perovskite Light-emitting Diodes

作　　者：柳贺夫 刘岳峰[1] 冯晶[1] LIU Hefu;LIU Yuefeng;FENG Jing(College of Electronic Science and Engineering,Jilin University,Changchun 130012,China)

机构地区：[1]吉林大学电子科学与工程学院,吉林长春130012

出　　处：《发光学报》2023年第5期873-880,共8页Chinese Journal of Luminescence

基　　金：国家重点研发计划(2020YFA0715000);吉林省科技发展计划(20220402011GH)。

摘　　要：在PEDOT∶PSS空穴传输层上气相沉积了CsPbBr_(3)和CsPbBrI_(2)全无机钙钛矿传输层和发光层,以PEDOT∶PSS/CsPbBr_(3)作为双空穴传输层,显著提高了基于CsPbBrI_(2)发光的全无机红光钙钛矿发光二极管(Perovskite light emitting diodes,PeLEDs)性能。相比基于PEDOT∶PSS空穴传输层的PeLEDs器件,其亮度、电流效率和外量子效率提升幅度分别达到了44%、157%和180%。器件性能提升一方面归因于PEDOT∶PSS/CsPbBr_(3)双空穴传输层的能级匹配提高了空穴传输效率,并有效抑制了PEDOT∶PSS酸性导致的激子猝灭;另一方面归因于生长在CsPbBr_(3)传输层上的CsPbBrI_(2)发光层具有更好的薄膜结晶质量。在PeLEDs中通过气相沉积生长传输层和发光层是一种简单有效的制备方案,在提高气相沉积全无机PeLEDs的性能方面有巨大潜力。The CsPbBr_(3) and CsPbBrI_(2) all inorganic perovskite transport layer and emission layer were vapor depos-ited on the PEDOT∶PSS hole transport layer.The performance of the all inorganic red light emitting diodes(PeLEDs)based on CsPbBrI_(2) luminescence was significantly improved by using PEDOT∶PSS/CsPbBr_(3) as the double hole trans-port layers.Compared with the traditional PeLEDs using PEDOT∶PSS as the hole transport layer,the enhancement ratio of luminance,current efficiency and external quantum efficiency is up to 44%,157%and 180%respectively.This obvious performance improvement is attributed to the improvement of hole injection efficiency caused by the pro-moted energy level alignment for the hole transport and the suppressed exciton quenching by the negative impact of PEDOT∶PSS acidity.Meanwhile,the crystallization quality of the CsPbBrI_(2) emission layer grown on the CsPbBr_(3) lay-er was improved.This is a simple and effective strategy to grow transport layer and emission layer in PeLEDs by va-por deposition,which has great potential in improving the performance of vacuum-evaporated all-inorganic PeLEDs.

关 键 词：全无机钙钛矿发光器件 气相沉积 铯铅溴 空穴传输层 

分 类 号：TN312.[电子电信—物理电子学]