Homoepitaxial growth of (100) Si-doped β-Ga_(2)O_(3) films via MOCVD  

作　　者：Wenbo Tang Xueli Han Xiaodong Zhang Botong Li Yongjian Ma Li Zhang Tiwei Chen Xin Zhou Chunxu Bian Yu Hu Duanyang Chen Hongji Qi Zhongming Zeng Baoshun Zhang 

机构地区：[1]School of Nano-Tech and Nano-Bionics,University of Science and Technology of China,Hefei 230026,China [2]Nanofabrication facility,Suzhou Institute of Nano-Tech and Nano-Bionics,Chinese Academy of Sciences,Suzhou 215123,China [3]Research Center of Laser Crystal,Shanghai Institute of Optics and Fine Mechanics,Chinese Academy of Sciences,Shanghai 201800,China [4]Hangzhou Institute of Optics and Fine Mechanics,Hangzhou 311421,China

出　　处：《Journal of Semiconductors》2023年第6期39-45,共7页半导体学报（英文版）

基　　金：supported in part by the National Basic Research Program of China (Grant No. 2021YFB3600202);Key Laboratory Construction Project of Nanchang (Grant No. 2020-NCZDSY-008);Suzhou Science and Technology Foundation (Grant No. SYG202027)。

摘　　要：Homoepitaxial growth of Si-doped β-Ga_(2)O_(3) films on semi-insulating(100) β-Ga_(2)O_(3) substrates by metalorganic chemical vapor deposition(MOCVD) is studied in this work. By appropriately optimizing the growth conditions, an increasing diffusion length of Ga adatoms is realized, suppressing 3D island growth patterns prevalent in(100) β-Ga_(2)O_(3) films and optimizing the surface morphology with [010] oriented stripe features. The slightly Si-doped β-Ga_(2)O_(3) film shows smooth and flat surface morphology with a root-mean-square roughness of 1.3 nm. Rocking curves of the(400) diffraction peak also demonstrate the high crystal quality of the Si-doped films. According to the capacitance–voltage characteristics, the effective net doping concentrations of the films are 5.41 × 10~(15) – 1.74 × 10~(20) cm~(-3). Hall measurements demonstrate a high electron mobility value of 51cm~2/(V·s), corresponding to a carrier concentration of 7.19 × 10~(18) cm~(-3) and a high activation efficiency of up to 61.5%. Transmission line model(TLM) measurement shows excellent Ohmic contacts and a low specific contact resistance of 1.29 × 10~(-4) Ω·cm~2 for the Si-doped film, which is comparable to the Si-implanted film with a concentration of 5.0 × 10~(19) cm~(-3), confirming the effective Si doing in the MOCVD epitaxy.

关 键 词：homoepitaxial growth MOCVD Si-doping films high activation efficiency Ohmic contacts 

分 类 号：TN304.055[电子电信—物理电子学]